Method of manufacturing oxynitride phosphor
View Patent ↗A method of manufacturing an oxynitride phosphor is revealed. A precursor is sintered under 0.1-1000 MPa nitrogen pressure for synthesis of an oxynitride phosphor. The general formula of the oxynitride phosphors is Ba 3-X Si 6 O 12 N 2 :Eu x Ba 3-X Si 6 O 6 N 6 :Eu x or Ba 3-X Si 6 O 9 N 4 :Eu x (0.00001≦x≦5; 0.00001). Thus pure phosphor can be mass-produced.
1. A method of manufacturing an oxynitride phosphor comprising the steps of:
providing a precursor, wherein the precursor includes at least one of elements selected from barium carbonate (BaCO 3 ), silicon dioxide (SiO 2 ), silicon nitride(Si 3 N 4 ), and europium oxide (Eu 2 O 3 ), a ratio of SiO 2 to ⅓Si 3 N 4 is 4:2; and
sintering the precursor under nitrogen pressure ranging from 0.1 to 1000 MPa for synthesis of an oxynitride phosphor;
wherein the oxynitride phosphor is Ba 3-X Si 6 O 12 N 2 :Eu x , Ba 3-X Si 6 O 6 N 6 :Eu x or Ba 3-X Si 6 O 9 N 4 :Eu x ; and
wherein x is ranging from 0.9 to 3.
2. The method as claimed in claim 1 , wherein a sintering temperature is 1375 degrees Celsius.
3. The method as claimed in claim 1 , wherein the method further includes a step of: acid-washing the oxynitride phosphor in a solution.
4. The method as claimed in claim 3 , wherein the solution is formed by an acid solute dissolved in a solvent; a concentration of the acid solute is ranging from 0% to 100% and greater than 0%, and the solvent is selected from organic solvent or water.
5. A method of manufacturing an oxynitride phosphor comprising the steps of:
providing a precursor, wherein the precursor is added with at least one seed crystal, and the seed crystal is an oxynitride phosphor having a particle size equal to 100 μm and the weight of the seed crystal is ranging from 1% to 60% of total weight of the oxynitride phosphor; and
sintering the precursor under nitrogen pressure ranging from 0.1 to 1000 MPa for synthesis of an oxynitride phosphor;
wherein the oxynitride phosphor is Ba 3-X Si 6 O 12 N 2 :Eu x , Ba 3-X Si 6 O 6 N 6 :Eu x or Ba 3-X Si 6 O 9 N 4 :Eu x ;
wherein x is ranging from 0.9 to 3.
6. The method as claimed in claim 1 , wherein the method further comprising providing at least one flux whose weight is ranging from 0.01 to 10% of total weight of the oxynitride phosphor.