Nested composite switch
View Patent ↗There are disclosed herein various implementations of nested composite switches. In one implementation, a nested composite switch includes a normally ON primary transistor coupled to a composite switch. The composite switch includes a low voltage (LV) transistor cascoded with an intermediate transistor having a breakdown voltage greater than the LV transistor and less than the normally ON primary transistor. In one implementation, the normally on primary transistor may be a group III-V transistor and the LV transistor may be an LV group IV transistor.
1. A nested composite switch comprising:
a normally ON primary transistor coupled to a composite switch;
said composite switch including a normally OFF low voltage (LV) transistor cascoded with a normally ON intermediate transistor having a breakdown voltage greater than said normally OFF LV transistor and less than said normally ON primary transistor;
said breakdown voltage of said normally ON intermediate transistor being greater than a pinch-off voltage required to turn said normally ON primary transistor OFF;
said normally ON primary and intermediate transistors being depletion mode transistors, and said normally OFF LV transistor being an enhancement mode transistor.
2. The nested composite switch of claim 1 , wherein said normally ON primary transistor is a group III-V transistor.
3. The nested composite switch of claim 1 , wherein said normally ON primary transistor is one of a III-Nitride heterostructure field-effect transistor (HFET) and a high electron mobility transistor (HEMT).
4. The nested composite switch of claim 1 , wherein said composite switch is a normally OFF composite switch.
5. The nested composite switch of claim 1 , wherein said normally OFF LV transistor is a normally OFF LV group IV transistor.
6. The nested composite switch of claim 1 , wherein said nested composite switch is normally OFF.
7. The nested composite switch of claim 1 , wherein said nested composite switch is monolithically integrated.
8. The nested composite switch of claim 1 , wherein at least two of said normally ON primary transistor, said normally ON intermediate transistor, and said normally OFF LV transistor are monolithically integrated.
9. The nested composite switch of claim 1 , wherein a composite drain of said composite switch is coupled to a source of said normally ON primary transistor, a composite source of said composite switch provides a nested composite source for said nested composite switch, and a composite gate of said composite switch provides a nested composite gate for said nested composite switch;
a drain of said normally ON primary transistor provides a nested composite drain for said nested composite switch, and a gate of said normally ON primary transistor is coupled to said composite source of said composite switch.
10. The nested composite switch of claim 1 , wherein said nested composite switch is cascoded with at least one higher voltage (HV+) primary transistor.
11. A nested composite switch comprising:
a normally ON primary transistor coupled to a normally OFF composite switch;
said normally OFF composite switch including a normally OFF low voltage (LV) transistor cascoded with a normally ON intermediate transistor having a breakdown voltage greater than said normally OFF LV transistor and less than said normally ON primary transistor;
said breakdown voltage of said normally ON intermediate transistor being greater than a pinch-off voltage required to turn said normally ON primary transistor OFF;
said normally ON primary and intermediate transistors being depletion mode transistors, and said normally OFF LV transistor being an enhancement mode transistor.
12. The nested composite switch of claim 11 , wherein said normally ON primary transistor is a normally ON group III-V transistor.
13. The nested composite switch of claim 11 , wherein said normally ON primary transistor is one of a Ill-Nitride heterostructure field-effect transistor (HFET) and a high electron mobility transistor (HEMT).
14. The nested composite switch of claim 11 , wherein said normally OFF LV transistor is a normally OFF LV group IV transistor.
15. The nested composite switch of claim 11 , wherein said nested composite switch is normally OFF.
16. The nested composite switch of claim 11 , wherein a composite drain of said normally OFF composite switch is coupled to a source of said normally ON primary transistor, a composite source of said normally OFF composite switch provides a nested composite source for said nested composite switch, and a composite gate of said normally OFF composite switch provides a nested composite gate for said nested composite switch;
a drain of said normally ON primary transistor provides a nested composite drain for said nested composite switch, and a gate of said normally ON primary transistor is coupled to said composite source of said normally OFF composite switch.
17. The nested composite switch of claim 11 , wherein said nested composite switch is monolithically integrated.
18. The nested composite switch of claim 11 , wherein at least two of said normally ON primary transistor, said normally ON intermediate transistor, and said normally OFF LV transistor are monolithically integrated.
19. The nested composite switch of claim 11 , wherein said nested composite switch is cascoded with at least one higher voltage (HV+) primary transistor.
20. A nested composite switch comprising:
a normally ON primary group III-V transistor coupled to a composite switch;
said composite switch including a normally OFF low voltage (LV) group IV transistor cascoded with a normally ON intermediate group III-V transistor having a breakdown voltage greater than said normally OFF LV group IV transistor and less than said normally ON primary group III-V transistor;
said breakdown voltage of said normally ON intermediate group III-V transistor being greater than a pinch-off voltage required to turn said normally ON primary group III-V transistor OFF;
said normally ON primary and intermediate group III-V transistors being depletion mode transistors, and said normally OFF LV group IV transistor being an enhancement mode transistor.
21. The nested composite switch of claim 20 , wherein said normally ON primary group III-V transistor is one of a III-Nitride heterostructure field-effect transistor (HFET) and a high electron mobility transistor (HEMT).
22. The nested composite switch of claim 20 , wherein said composite switch is a normally OFF composite switch.
23. The nested composite switch of claim 20 , wherein said nested composite switch is normally OFF.
24. The nested composite switch of claim 20 , wherein a composite drain of said composite switch is coupled to a source of said normally ON primary group III-V transistor, a composite source of said composite switch provides a nested composite source for said nested composite switch, and a composite gate of said composite switch provides a nested composite gate for said nested composite switch;
a drain of said normally ON primary group III-V transistor provides a nested composite drain for said nested composite switch, and a gate of said normally ON primary group III-V transistor is coupled to said composite source of said composite switch.
25. The nested composite switch of claim 20 , wherein said nested composite switch is monolithically integrated.
26. The nested composite switch of claim 20 , wherein at least two of said normally ON primary group III-V transistor, said normally ON intermediate group III-V transistor, and said normally OFF LV group CV transistor are monolithically integrated.
27. The nested composite switch of claim 20 , wherein said nested composite switch is cascoded with at least one higher voltage (HV+) primary transistor.