Field effect control of a microelectromechanical (MEMS) resonator
Apparatus and methods for control of charge in a semiconductor material of a mechanical resonating structure are described. Controlling the charge of the material may control the material properties of the semiconductor, such as the stiffness. Such control may result in changes in the behavior of the mechanical resonating structure, allowing for control and tuning of the behavior of the mechanical resonating structure.
1. A piezoelectric mechanical resonating structure, comprising:
a first electrode;
a second electrode;
a piezoelectric material active layer between the first and second electrodes and configured to oscillate in response to application of an electric voltage thereto by the first and second electrodes;
a semiconductor layer, wherein the second electrode is configured between the semiconductor layer and the piezoelectric material active layer, and wherein the semiconductor layer is a suspended layer coupled to a substrate by at least one anchor; and
an electrical contact to the semiconductor layer and distinct from the second electrode, wherein the second electrode and the electrical contact to the semiconductor layer are configured to apply a bias voltage to the semiconductor layer.
2. The piezoelectric mechanical resonating structure of claim 1 , wherein the second electrode is configured as a ground plane.
3. The piezoelectric mechanical resonating structure of claim 1 , further comprising an oxide layer between the second electrode and the semiconductor layer.
4. The piezoelectric mechanical resonating structure of claim 3 , wherein the second electrode, oxide layer, and semiconductor layer are configured as a capacitor.
5. The piezoelectric mechanical resonating structure of claim 1 , wherein the second electrode directly contacts the semiconductor layer.
6. The piezoelectric mechanical resonating structure of claim 1 , wherein the semiconductor layer is doped to have at least one pn junction therein.
7. The piezoelectric mechanical resonating structure of claim 1 , wherein the electrical contact to the semiconductor layer is a direct electrical contact.
8. A mechanical resonating structure, comprising:
an active layer configured to oscillate in response to actuation;
a support layer comprising a semiconductor material and configured to support the active layer; and
a plurality of electrodes configured to apply a bias voltage to the support layer to control a charge distribution of the support layer.
9. The mechanical resonating structure of claim 8 , further comprising a temperature compensation structure configured to compensate temperature induced changes in stiffness of the active layer, wherein the support layer forms part of the temperature compensation structure.
10. The mechanical resonating structure of claim 8 , wherein a first electrode of the plurality of electrodes is configured in combination with a second electrode of the plurality of electrodes to apply the bias voltage to the support layer, and wherein the first electrode and a third electrode are configured in combination to apply an actuation signal to the active layer.
11. The mechanical resonating structure of claim 8 , wherein the support layer forms part of a capacitor.
12. The mechanical resonating structure of claim 8 , wherein the support layer forms part of a diode.
13. The mechanical resonating structure of claim 8 , wherein the support layer forms part of a transistor.