Method for fabricating ultra-fine nanowire
Disclosed herein is a method for fabricating an ultra fine nanowire, which relates to a manufacturing technology of a microelectronic semiconductor transistor. This method obtains a suspended ultra fine nanowire base on a combination of a mask blocking oxidation process and a stepwise oxidation process. A diameter of the suspended ultra fine nanowire fabricated by this method is precisely controlled to 20 nm by controlling a thickness of a deposited silicon nitride film and a time and temperature of the two oxidation process. Since a speed of a dry oxidation process is slower, the size of the final nanowire may be precisely controlled. This method can be used to fabricate an ultra fine nanowire with a lower cost and a higher applicability.
1. A method for fabricating an ultra fine nanowire, comprising:
a) depositing a silicon nitride film over a silicon substrate;
b) coating a photoresist layer onto the silicon nitride film;
c) performing a photolithography process to define a region to be used as a mask pattern of a silicon nanowire;
d) etching the silicon nitride film to finally transfer a pattern of the photoresist layer onto the silicon nitride film;
e) removing the photoresist layer;
f) performing a dry anisotropic etching process on the silicon substrate;
g) performing a wet oxidation process to slim a size of the silicon nanowire;
h) etching the silicon nitride film through a heated concentrated phosphoric acid;
i) performing a dry oxidation process on the nanowire to oxidize the silicon nanowire so that the silicon nanowire is suspended; and
j) performing a wet etching process on a silicon oxide film to dehydrate a entire chip of the silicon, so as to finally obtain the fine nanowire with a finer width.
2. The method according to claim 1 , wherein, the deposition of the silicon nitride film is performed by a low pressure chemical vapor deposition method.
3. The method according to claim 1 , wherein, the application of the photoresist is performed by a typical photolithography.
4. The method according to claim 1 , wherein, the etching of the silicon nitride film and the substrate is performed by using an anisotropic dry etching technology.
5. The method according to claim 1 , wherein, the wet etching of the silicon nitride film is performed by using a concentrated phosphoric acid with a temperature higher than 170° C.
6. The method according to claim 1 , wherein, the wet etching of the oxide layer is performed by using a hydrogen fluoride solution, wherein a hydrofluoric acid and water have a volume ratio of 1:10.