Plate and shaft device
A method for the joining of a ceramic shaft and a ceramic plate into an assembly, such as a heater, adapted to be used in semiconductor processing. The joined pieces are adapted to withstand the environments within a process chamber during substrate processing, chamber cleaning processes, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck. The ceramic pieces may be aluminum nitride and the pieces may be brazed with aluminum. The joint material is adapted to withstand both the environments within a process chamber during substrate processing, and the oxygenated atmosphere which may be seen within the shaft of a heater or electrostatic chuck. The joint is adapted to provide a hermetic seal across the joint. The joined pieces are adapted to be separated at a later time should rework or replacement of one of the pieces be desired.
1. A plate and shaft device used in semiconductor processing, said plate and shaft device comprising:
a plate, said plate comprising aluminum nitride;
a shaft, said shaft comprising aluminum nitride, said shaft comprising an interior space and an exterior, said shaft coupled to a bottom surface of said plate;
a first joining layer disposed between said plate and said shaft, wherein said first joining layer hermetically seals said interior space of said shaft from said exterior of said shaft through said first joining layer.
2. The plate and shaft device of claim 1 wherein said first joining layer comprises aluminum.
3. The plate and shaft device of claim 1 wherein said plate and shaft device is a heater adapted for semiconductor processing.
4. The plate and shaft device of claim 3 wherein said first joining layer comprises greater than 99% by weight aluminum.
5. The plate and shaft device of claim 1 wherein said plate and shaft device is an electrostatic chuck adapted for semiconductor processing.
6. The plate and shaft device of claim 5 wherein said first joining layer comprises greater than 99% by weight aluminum.
7. A plate and shaft device used in semiconductor processing, said plate and shaft device comprising:
a plate, said plate comprising a first ceramic;
a shaft, said shaft comprising a second ceramic, said shaft comprising an interior space and an exterior, said shaft coupled to a bottom surface of said plate;
a first joining layer disposed between said plate and said shaft, wherein said first joining layer hermetically seals said interior space of said shaft from said exterior of said shaft through said first joining layer,
wherein the conductive heat coefficient of said first ceramic is higher that the conductive heat coefficient of said second ceramic.
8. The plate and shaft device of claim 7 wherein said first ceramic comprises aluminum nitride, and wherein said second ceramic comprises zirconia.
9. The plate and shaft device of claim 8 wherein said first joining layer comprises aluminum.
10. A plate and shaft device used in semiconductor processing, said plate and shaft device comprising:
a plate, said plate comprising ceramic;
a shaft, said shaft comprising ceramic, said shaft comprising an interior space and an exterior, said shaft coupled to a bottom surface of said plate;
a first joining layer disposed between said plate and said shaft, wherein said first joining layer hermetically seals said interior space of said shaft from said exterior of said shaft through said first joining layer; and
a second joining layer, wherein said second joining layer seals said interior space of said shaft from said exterior of said shaft along the shaft and plate interface at a radial distance greater than the radial distance of said first joining layer.
11. The plate and shaft device of claim 10 wherein said second joining layer comprises aluminum.
12. The plate and shaft device of claim 10 further comprising a third joining layer, wherein said third joining layer seals said interior space of said shaft from said exterior of said shaft along the shaft and plate interface at a radial distance less than the radial distance of said first joining layer.
13. The plate and shaft device of claim 12 wherein said second joining layer comprises aluminum.