Light-emitting device
View Patent ↗The application provides a light-emitting device, comprising a substrate; a plurality of first light-emitting diode units on the substrate, wherein every first light-emitting diode unit has a first electrode structure; and a plurality of second light-emitting diode units among the plurality of first light-emitting diode units, wherein every second light-emitting diode unit has a second electrode structure. The second electrode structure of the second light-emitting diode unit is flipped over and electrically connected with the adjacent first electrode structure of the first light-emitting diode unit.
1. A light-emitting device, comprising:
a substrate;
a plurality of first light-emitting diode units on the substrate, wherein every first light-emitting diode unit has a first electrode structure; and
a plurality of second light-emitting diode units among the plurality of first light-emitting diode units, wherein every second light-emitting diode unit has a second electrode structure;
wherein the second electrode structure of the second light-emitting diode unit is flipped over and electrically connected with the adjacent first electrode structure of the first light-emitting diode unit.
2. The light-emitting device according to claim 1 , wherein the substrate is a growth substrate.
3. The light-emitting device according to claim 1 , wherein the substrate is a carrier substrate which can be a print circuit board, a soft substrate, an aluminum substrate, a ceramic substrate, or a copper substrate.
4. The light-emitting device according to claim 1 , further comprising a plurality of intervals among the plurality of first light-emitting diode units.
5. The light-emitting device according to claim 1 , wherein at least one of the first light-emitting diode units and one of the second light-emitting diode units each comprises:
a first conductivity type semiconductor layer;
a second conductivity type semiconductor layer; and
an active layer formed between the first conductivity type semiconductor layer and the second conductivity type conductor layer, wherein for the one of the first light-emitting diode units, the first conductivity type semiconductor layer is between the substrate and the first electrode structure, and for the one of the second light-emitting diode units, the second electrode structure is between the first conductivity type semiconductor layer and the substrate.
6. The light-emitting device according to claim 5 , wherein a dominant wavelength emitting from any of the plurality of first light-emitting diode units is different from a dominant wavelength emitting from any of the plurality of second light-emitting diode units.
7. The light-emitting device according to claim 1 , further comprising an underfill between the plurality of second light-emitting diode units and the substrate, wherein the underfill comprises an insulating material.
8. The light-emitting device according to claim 1 , further comprising an underfill between the plurality of second light-emitting diode units and the substrate, wherein the underfill is an anisotropic conductive glue.
9. The light-emitting device according to claim 2 , wherein the light-emitting device is a single chip having a side length between 0.5 mm and 5 mm.
10. The light-emitting device according to claim 1 , wherein a sidewall of any of the first light-emitting diode units and/or any of the second light-emitting diode units comprises a non-vertical incline.
11. The light-emitting device according to claim 1 , wherein each of the first electrode stucture and the second electrode structure comprises a first electrical electrode and a second electrical electrode, and one of the first electrical electrodes of the second light-emitting diode units electrically connects with the adjacent second electrical electrode of one of the first light-emitting diode units.
12. The light-emitting device according to claim 3 , wherein the plurality of first light-emitting diode units further comprising a plurality of electrical connecting structures, wherein the plurality of first light-emitting diode units electrically connects with the substrate by the electrical connecting structures.
13. The light-emitting device according to claim 4 , wherein a width of one of the intervals are smaller than a length of one side of the plurality of second light-emitting diode units.
14. The light-emitting device according to claim 4 , wherein a width of one of the intervals are greater than a length of one side of the plurality of second light-emitting diode units.
15. The light-emitting device according to claim 4 , wherein a width of one of the intervals is between 0.1 mm and 2 mm, or between 0.25 mm and 5 mm.
16. The light-emitting device according to claim 4 , wherein the plurality of second light-emitting diode units is formed in the intervals.
17. The light-emitting device according to claim 4 , wherein each of the intervals comprise a first insulating structure, and a height of the first insulating structure is smaller than or equal to the height of any one of the first light-emitting diode units.
18. The light-emitting device according to claim 17 , further comprising one extending electrode structure on the first insulating structure, wherein the second electrode structure of one of the second light-emitting diode unit electrically connects with the adjacent first electrode structure of one of the first light-emitting diode unit by the extending electrode structure.
19. The light-emitting device according to claim 5 , wherein the one of the first light-emitting diode units further comprises a second substrate between the first conductivity type semiconductor layer and the substrate.
20. The light-emitting device according to claim 5 , wherein the one of the second light-emitting diode units further comprises a second substrate, and the second electrode structure is between the substrate and the second substrate.