Multi-chip OPS-laser
View Patent ↗A two-chip OPS laser includes first and second OPS-chips each emitting the same fundamental wavelength in first and second resonators. The first and second resonators are interferometrically combined on a common path terminated by a common end-mirror. The interferometric combination provides for automatic wavelength-locking of the laser, which can eliminate the need for a separate wavelength selective device in the laser.
1. OPS-laser apparatus, comprising:
a first OPS-chip including a first multilayer semiconductor gain-structure surmounting a mirror-structure;
a second OPS-chip including a second multilayer semiconductor gain-structure surmounting a second mirror-structure;
an end-mirror;
a partially reflecting partially transmitting beam-splitter, said beam splitter not relying on polarization or wavelength discrimination for splitting the radiation generated by the first and second OPS-chips;
a first laser-resonator formed between the first mirror-structure and the end mirror and including the first multilayer gain-structure;
a second laser-resonator formed between the second mirror-structure and the end mirror and including the second multilayer gain-structure, the first and second laser-resonators being combined on a common path between the beam-splitter and the end mirror and wherein, when the first and second gain structures are energized by optical pump radiation, the first and second resonators generate laser-radiation at the same fundamental wavelength and with the same polarization orientation and wherein the first and second resonators have different lengths and wherein the resonators do not include a spectrally selective element for selecting the fundamental wavelength of the laser-radiation generated by the laser-resonators and wherein the fundamental wavelength radiation is either delivered as the output of the apparatus or used in a frequency conversion process to output harmonic radiation.
2. The apparatus of claim 1 , wherein the beam-splitter is between about 20% and 80% reflecting and, respectively, between about 80% and 20% transmitting for the fundamental-wavelength radiation generated by the laser-resonators.
3. The apparatus of claim 2 , wherein the beam-splitter is about 50% reflecting and about 50% transmitting for the fundamental-wavelength radiation generated by the laser-resonators.
4. The apparatus of claim 1 wherein the length difference of the laser-resonators is equal to or greater than about 5 millimeters.
5. The apparatus of claim 1 , wherein the end-mirror is partially transmissive at the wavelength generated by the laser-resonators for delivering the fundamental-wavelength radiation generated by the laser-resonators from the laser-resonators.
6. The apparatus of claim 1 , further including an optically nonlinear crystal arranged in the common path of the laser-resonators for frequency-doubling the fundamental-wavelength radiation generated by the laser-resonators to provide second-harmonic radiation.
7. The apparatus of claim 6 , wherein the common path of the laser-resonators is folded by a fold mirror located between the beam-splitter and the end-mirror and the optically nonlinear crystal is located between the fold-mirror and the end mirror.
8. The apparatus of claim 7 , wherein the fold mirror is highly reflective for the fundamental-wavelength radiation and highly transmissive for the second-harmonic radiation for delivering the second-harmonic radiation from the laser-resonators.
9. OPS-laser apparatus, comprising:
a first OPS-chip including a first multilayer semiconductor gain-structure surmounting a mirror-structure;
a second OPS-chip including a second multilayer semiconductor gain-structure surmounting a second mirror-structure;
an end-mirror;
a partially reflecting partially transmitting beam-splitter, said beam splitter not relying on polarization or wavelength discrimination for splitting the radiation generated by the first and second OPS-chips;
a first laser-resonator formed between the first mirror-structure and the end mirror and including the first multilayer gain-structure;
a second laser-resonator formed between the second mirror-structure and the end mirror and including the second multilayer gain-structure, the first and second laser-resonators being combined on a common path between the beam-splitter and the end mirror;
wherein, when the first and second gain structures are energized by optical pump radiation, the first and second resonators generate laser-radiation at the same fundamental wavelength and with the same polarization orientation; and
wherein an optically nonlinear crystal is arranged in the common path of the laser-resonators for frequency-doubling the fundamental-wavelength radiation generated by the laser-resonators to provide second-harmonic radiation and wherein the optically nonlinear crystal has an acceptance bandwidth for the second-harmonic generation and wherein the first and second resonators have different lengths and wherein the resonators do not include a spectrally selective element for maintaining the fundamental wavelength of the laser-radiation generated by the laser-resonators within the acceptance bandwidth of the optically nonlinear crystal and wherein the second harmonic radiation is delivered as output from the apparatus.
10. The apparatus of claim 9 , wherein the common path of the laser-resonators is folded by a fold mirror located between the beam-splitter and the end-mirror and the optically nonlinear crystal is located between the fold-mirror and the end mirror.
11. The apparatus of claim 10 , wherein the fold mirror is highly reflective for the fundamental-wavelength radiation and highly transmissive for the second-harmonic radiation for delivering the second-harmonic radiation from the laser-resonators.
12. The apparatus of claim 11 , wherein the beam-splitter is about 50% reflecting and about 50% transmitting at about the fundamental wavelength generated by the laser-resonators.
13. The apparatus of claim 9 wherein the length difference of the laser-resonators is between about 5 millimeters and about 50 millimeters.
14. A laser apparatus comprising:
a first laser resonator including a first OPS chip and an end mirror and a partially transmissive beam splitter therebetween; and
a second laser resonator that partially overlaps the first resonator to define a common path from the beam splitter to the end mirror, said second laser resonator including a second OPS chip, wherein the first and second OPS chips are respectively located in the non-overlapping portions of the first and second resonators, said first and second chips being optically pumped and generating substantially the same fundamental wavelength radiation and wherein the lengths of the first and second resonators are different and wherein the resonators do not include a spectrally selective element for selecting the fundamental wavelength radiation generated by the laser resonators and wherein the beam splitter does not rely on polarization or wavelength discrimination for splitting the radiation generated by the first and second OPS chips and wherein the fundamental wavelength radiation is either delivered as the output of the apparatus or used in a frequency conversion process to output harmonic radiation.
15. The laser apparatus of claim 14 wherein the difference in length between the first and second resonators is equal to or greater than about 5 millimeters.
16. The laser apparatus of claim 15 further including a nonlinear crystal located in the common portion of the resonators for frequency converting the fundamental wavelength radiation output of the first and second chips.
17. The laser apparatus of claim 16 further including a fold mirror between the end mirror and the beam splitter, with said nonlinear crystal being located between the end mirror and the fold mirror and with the fold mirror being highly reflective of the fundamental wavelength radiation and highly transmissive of the frequency converted wavelength radiation.
18. The laser apparatus of claim 15 , wherein the beam splitter is between about 20% and 80% reflecting and, respectively, between about 80% and 20% transmitting for the fundamental wavelength radiation.
19. The laser apparatus of claim 15 , wherein the beam splitter is about 50% reflecting and about 50% transmitting for the fundamental wavelength radiation.
20. The laser apparatus of claim 14 wherein the difference in length between the first and second resonators is between about 5 millimeters and about 50 millimeters.