Inverted metamorphic multijunction solar cells having a permanent supporting substrate
View Patent ↗The present disclosure provides a method of manufacturing a solar cell that includes providing a semiconductor growth substrate; depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell; applying a metal contact layer over said sequence of layers; affixing the adhesive polyimide surface of a permanent supporting substrate directly over said metal contact layer and permanently bonding it thereto by a thermocompressive technique; and removing the semiconductor growth substrate.
1. A method of manufacturing a solar cell comprising:
providing a growth substrate composed of GaAs;
depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell;
providing a glass surrogate substrate having a thickness of about 40 mils;
bonding an adhesive polyimide layer to the glass surrogate substrate at a curing temperature above 350 degrees C.;
permanently bonding the surface of the adhesive polyimide layer of the glass surrogate substrate to the surface of the sequence of layers of semiconductor material at a temperature of about 300 degrees C. with a thermocompressive technique using a press for directing pressure and heat to form a solar cell;
removing the growth substrate after the surrogate substrate has been attached by grinding, etching, or epitaxial lift-off;
forming grid electrodes on the surface of the layers of semiconductor material to form a top surface of the solar cell; and
attaching a cover glass to the top surface of the solar cell,
wherein said step of depositing a sequence of layers of semiconductor material includes:
forming a first solar subcell on said substrate composed of an GaInP, GaAs, GaInAs, GaAsSb, or GaInAsN emitter region and an GaAs, GaInAs, GaAsSb, or GaInAsN base region and having a first band gap;
forming a second solar subcell over said first subcell composed of an InGaP emitter layer and a GaAs or GaInAs base layer and having a second band gap smaller than said first band gap;
forming a grading interlayer over said second subcell that is compositionally graded to lattice match the second subcell on one side and a third subcell on the other side, and is composed of (In x Ga 1-x ) y Al 1-y As, wherein 0<x<1 and 0<y<1 with x and y selected such that the band gap of the interlayer remains constant at approximately a 1.5 eV throughout its thickness and greater than said second band gap; and
forming a third solar subcell composed of an InGaAs base and emitter layer, or a InGaAs base layer and a InGaP emitter layer and having a fourth band gap smaller than said second band gap such that said third subcell is lattice mismatched with respect to said second subcell.
2. A method of manufacturing a solar cell comprising:
providing a growth substrate;
depositing on said growth substrate a sequence of layers of semiconductor material forming a solar cell;
providing a glass surrogate substrate;
bonding an adhesive polyimide layer to the glass surrogate substrate;
adjoining the surface of the adhesive polyimide layer of the glass surrogate substrate to the surface of the sequence of layers of semiconductor material forming a solar cell and permanently bonding it thereto by a thermocompressive technique using a press for directing pressure and heat; and
removing the growth substrate,
wherein said step of depositing a sequence of layers of semiconductor material includes:
forming a first solar subcell on said substrate composed of an GaInP, GaAs, GaInAs, GaAsSb, or GaInAsN emitter region and an GaAs, GaInAs, GaAsSb, or GaInAsN base region and having a first band gap;
forming a second solar subcell over said first subcell composed of an InGaP emitter layer and a GaAs or GaInAs base layer and having a second band gap smaller than said first band gap;
forming a grading interlayer over said second subcell that is compositionally graded to lattice match the second subcell on one side and a third subcell on the other side, and is composed of (In x Ga 1-x ) y Al 1-y As, wherein 0<x<1 and 0<y<1 with x and y selected such that the band gap of the interlayer remains constant at approximately a 1.5 eV throughout its thickness and greater than said second band gap; and
forming a third solar subcell composed of an InGaAs base and emitter layer, or a InGaAs base layer and a InGaP emitter layer and having a fourth band gap smaller than said second band gap such that said third subcell is lattice mismatched with respect to said second subcell.
3. A method as defined in claim 2 , further comprising attaching a cover glass to the top surface of the solar cell.
4. A method as defined in claim 3 , wherein the step of bonding an adhesive polyimide to the permanent glass surrogate substrate is performed at a curing temperature above 350 degrees C.; and the step of adjoining the cured adhesive polyimide layer surface and the glass surrogate substrate to the surface of the sequence of layers of semiconductor material forming a solar cell is performed at a temperature of about 300 degrees C.
5. A method as defined in claim 2 , wherein the growth substrate is removed after the surrogate substrate has been attached by grinding, etching, or epitaxial lift-off.
6. A method as defined in claim 2 , further comprising forming grid electrodes on the surface of the layers of semiconductor material to form a top surface of the solar cell.
7. A method as defined in claim 2 , wherein said growth substrate is composed of GaAs.
8. A method as defined in claim 2 , wherein the glass surrogate substrate has a thickness of about 40 mils.