Backside contact solar cell with formed polysilicon doped regions
View Patent ↗A solar cell includes abutting P-type and N-type doped regions in a contiguous portion of a polysilicon layer. The polysilicon layer may be formed on a thin dielectric layer, which is formed on a backside of a solar cell substrate (e.g., silicon wafer). The polysilicon layer has a relatively large average grain size to reduce or eliminate recombination in a space charge region between the P-type and N-type doped regions, thereby increasing efficiency.
1. A method of fabricating a solar cell, the method comprising:
forming a polysilicon layer over a back surface of a silicon substrate;
forming a first dopant source and a second dopant source over the polysilicon layer;
locally heating the polysilicon layer to drive dopants from the first dopant source and the second dopant source to the polysilicon layer to form a P-type doped region and an N-type doped region that abut in a contiguous portion of the polysilicon layer and to recrystallize the polysilicon layer to increase its average grain size; and
forming a metal contact to each of the P-type doped region and the N-type doped region that abut in the contiguous portion of the polysilicon layer.
2. The method of claim 1 wherein the polysilicon layer is locally heated using a laser.
3. The method of claim 1 wherein the polysilicon layer is formed on a thin dielectric layer formed on the backside of the solar cell substrate.
4. The method of claim 3 wherein the thin dielectric layer comprises silicon dioxide formed to a thickness less than 40 Angstroms.
5. The method of claim 1 wherein the first dopant source comprises boron and the second dopant source comprise phosphorus.
6. The method of claim 1 wherein the polysilicon layer is recrystallized to have an average grain size of at least 1 micron.
7. A method of fabricating a solar cell, the method comprising:
forming a polysilicon layer over a back surface of a silicon substrate;
forming a first dopant source and a second dopant source over the polysilicon layer;
driving dopants from the first dopant source and the second dopant source to the polysilicon layer to form a P-type doped region and an N-type doped region that abut in a contiguous portion of the polysilicon layer;
recrystallizing the polysilicon layer to increase its average grain size to at least 1 micron; and
forming a metal contact to each of the P-type doped region and the N-type doped region that abut in the contiguous portion of the polysilicon layer.
8. The method of claim 7 wherein driving dopants from the first dopant source and the second dopant source to the polysilicon layer and recrystallizing the polysilicon layer to increase its average grain size to at least 1 micron are performed by locally heating the polysilicon layer.
9. The method of claim 8 wherein the polysilicon layer is locally heated using a laser.
10. The method of claim 7 further comprising:
forming a trench between the P-type doped region and the N-type doped region.
11. The method of claim 10 further comprising:
forming a silicon nitride layer in the trench.
12. The method of claim 7 wherein the polysilicon layer is formed on a thin dielectric layer formed on the backside of the solar cell substrate.
13. The method of claim 12 wherein the thin dielectric layer comprises silicon dioxide formed to a thickness less than 40 Angstroms.
14. A method of fabricating a solar cell, the method comprising:
forming a polysilicon layer over a back surface of a silicon substrate;
forming a P-type doped region and an N-type doped region that abut in a contiguous portion of the polysilicon layer;
locally heating the polysilicon layer to increase its average grain size; and
forming a metal contact to each of the P-type doped region and the N-type doped region that abut in the contiguous portion of the polysilicon layer.
15. The method of claim 14 wherein the polysilicon layer is locally heated using a laser.
16. The method of claim 14 wherein the polysilicon layer is formed on a thin dielectric layer formed on the backside of the solar cell substrate.
17. The method of claim 14 wherein locally heating the polysilicon layer increases its average grain size to at least 1 micron.