Semiconductor device having groove-shaped via-hole
View Patent ↗The semiconductor device has insulating films 40, 42 formed over a substrate 10 ; an interconnection 58 buried in at least a surface side of the insulating films 40, 42 ; insulating films 60, 62 formed on the insulating film 42 and including a hole-shaped via-hole 60 and a groove-shaped via-hole 66 a having a pattern bent at a right angle; and buried conductors 70, 72 a buried in the hole-shaped via-hole 60 and the groove-shaped via-hole 66 a . A groove-shaped via-hole 66 a is formed to have a width which is smaller than a width of the hole-shaped via-hole 66 . Defective filling of the buried conductor and the cracking of the inter-layer insulating film can be prevented. Steps on the conductor plug can be reduced. Accordingly, defective contact with the upper interconnection layer and the problems taking place in forming films can be prevented.
1. A semiconductor device comprising:
a rectangular semiconductor substrate including a semiconductor circuit region and four corners;
a first insulating film formed above the rectangular semiconductor substrate;
a second insulating film formed above the first insulating film;
a plurality of guard rings which surround the semiconductor circuit region; and
a first conductive layer formed in the first insulating film;
wherein:
each of said guard rings comprises a groove-shaped via formed in the second insulating film and connected to the first conductive layer;
the groove-shaped via includes a pattern bent twice each time at an angle of larger than 90 degree at each of the four corners; and
the pattern is bent totally at 90 degree at each of the four corners of the semiconductor substrate.
2. The semiconductor device according to claim 1 , wherein the first insulating film is SiC based film.
3. The semiconductor device according to claim 1 , wherein the first insulating film is SiOC based film.
4. The semiconductor device according to claim 1 , wherein the first insulating film is SiOC film/SiC film-based inter-layer insulating film.
5. The semiconductor device according to claim 1 , wherein the first insulating film includes silicon, carbon and oxygen.
6. The semiconductor device according to claim 1 , wherein the second insulating film is SiC based film.
7. The semiconductor device according to claim 1 , wherein the second insulating film is SiOC based film.
8. The semiconductor device according to claim 1 , wherein the second insulating film is SiOC film/SiC film-based inter-layer insulating film.
9. The semiconductor device according to claim 1 , wherein the second insulating film includes silicon, carbon and oxygen.
10. The semiconductor device according to claim 1 , wherein the first insulating film and the second insulating film include silicon, carbon and oxygen.