Method and system for fracturing a pattern using lithography with multiple exposure passes
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed. Base dosages for a plurality of exposure passes are set and a multiplicity of shots for the plurality of exposure passes is exposed. The multiplicity of shots comprises two groups: a first group of shots for at least two exposures passes, wherein the union of shots for each exposure pass covers the same area, and where shots within an exposure pass are disjoint; and a second group of shots, where each shot in the second group of shots overlaps a shot in the first group of shots. Each shot in the second group is in one of the plurality of exposure passes. A method for forming a set of patterns on a surface is also disclosed.
1. A method for fracturing or mask data preparation or proximity effect correction for charged particle beam lithography, the method comprising the steps of:
setting a base dosage level for each of a plurality of exposures passes for a shaped beam charged particle beam writer; and
determining a multiplicity of shots for the shaped beam charged particle beam writer, the shots comprising:
a first group of shots consisting of a plurality of shots for at least two of the plurality of exposure passes, wherein the union of the plurality of shots for each exposure pass in the first group covers the same area as the union of all shots in the first group, and wherein shots within any one exposure pass are disjoint; and
a second group of one or more shots, wherein each shot in the second group of shots is for exposure in an exposure pass in the plurality of exposure passes, and wherein each shot in the second group of shots overlaps a shot in the first group of shots.
2. The method of claim 1 wherein the base dosage level for each of the at least two exposure passes in the first group is the same.
3. The method of claim 1 wherein all shots in the second group of shots are exposed in a single exposure pass.
4. The method of claim 1 wherein within the second group of shots, two shots in different exposure passes overlap.
5. The method of claim 1 wherein each exposure pass which contains second group shots also contains first group shots.
6. The method of claim 1 wherein the shots in the multiplicity of shots have unassigned shot dosages.
7. The method of claim 1 wherein the step of determining comprises using charged particle beam simulation.
8. The method of claim 7 wherein the charged particle beam simulation includes at least one of the group consisting of forward scattering, backward scattering, resist diffusion, coulomb effect, etching, fogging, loading and resist charging.
9. The method of claim 1 wherein the second group of shots comprises one or more shots for each of two or more exposure passes in the plurality of exposure passes, and wherein the union of the one or more shots for any exposure pass in the second group is different than the union of all second group shots.
10. A method for forming a set of patterns on a surface using charged particle beam lithography, the method comprising the steps of:
setting a base dosage level for each of a plurality of exposures passes for a shaped beam charged particle beam writer; and
exposing a multiplicity of shots with the shaped beam charged particle beam writer, the shots comprising:
a first group of shots consisting of a plurality of shots for at least two of the plurality of exposure passes, wherein the union of the plurality of shots for each exposure pass in the first group covers the same area as the union of all shots in the first group, and wherein shots within any one exposure pass are disjoint; and
a second group of one or more shots, wherein each shot in the second group of shots is for exposure in an exposure pass in the plurality of exposure passes, and wherein each shot in the second group of shots overlaps a shot in the first group of shots.
11. The method of claim 10 wherein the base dosage level for each of the at least two exposure passes in the first group is the same.
12. The method of claim 10 wherein all shots in the second group of shots are exposed in a single exposure pass.
13. The method of claim 10 wherein within the second group of shots, two shots in different exposure passes overlap.
14. The method of claim 10 wherein the shots in the multiplicity of shots have unassigned shot dosages.
15. The method of claim 10 wherein each exposure pass which contains second group shots also contains first group shots.
16. The method of claim 10 wherein the step of determining comprises using charged particle beam simulation.
17. The method of claim 16 wherein the charged particle beam simulation includes at least one of the group consisting of forward scattering, backward scattering, resist diffusion, coulomb effect, etching, fogging, loading and resist charging.
18. The method of claim 10 wherein the second group of shots comprises one or more shots for each of two or more exposure passes in the plurality of exposure passes, and wherein the union of the one or more shots for any exposure pass in the second group is different than the union of all second group shots.
19. A system for fracturing or mask data preparation or proximity effect correction for use with shaped beam charged particle beam lithography, the system comprising:
an input device capable of receiving a set of patterns to be formed on a surface; and
a computation device capable of determining a set of shots that can be used to form the set of patterns using a plurality of exposure passes with a shaped beam charged particle beam writer, wherein each exposure pass has a base dosage level, and wherein the plurality of exposure passes comprises:
a first group of shots consisting of a plurality of shots for at least two of the plurality of exposure passes, wherein the union of the plurality of shots for each exposure pass in the first group covers the same area as the union of all shots in the first group, and wherein shots within any one exposure pass are disjoint; and
a second group of one or more shots, wherein each shot in the second group of shots is for exposure in an exposure pass in the plurality of exposure passes, and wherein each shot in the second group of shots overlaps a shot in the first group of shots.
20. The system of claim 19 wherein the base dosage level for each of the plurality of exposure passes is the same.
21. The system of claim 19 wherein the shots in the set of shots have unassigned shot dosages.
22. The system of claim 19 wherein all shots in the second group of shots are exposed in a single exposure pass.
23. The system of claim 19 wherein within the second group of shots, two shots in different exposure passes overlap.
24. The system of claim 19 wherein the computation device determines the set of shots using charged particle beam simulation.
25. The system of claim 24 wherein the charged particle beam simulation includes at least one of the group consisting of forward scattering, backward scattering, resist diffusion, coulomb effect, etching, fogging, loading and resist charging.