Thin film transistor substrate and display device
View Patent ↗A thin film transistor substrate with reduced interlayer short-circuit defects in a capacitor, and a display device having the thin film transistor substrate. The thin film transistor substrate includes: a substrate; a thin film transistor having, over the substrate, a gate electrode, a gate insulating film, an oxide semiconductor layer, and a source-drain electrode in order; and a capacitor having, over the substrate, a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order.
1. A thin film transistor substrate comprising:
a substrate;
a thin film transistor including a gate electrode, a gate insulating film, an oxide semiconductor layer and a source-drain electrode; and
a capacitor including a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order,
wherein,
the top electrode has a contact region which is in contact with the source-drain electrode, and
the top electrode is thinner than the bottom electrode.
2. A thin film transistor substrate comprising:
a substrate;
a thin film transistor including a gate electrode, a gate insulating film, an oxide semiconductor layer and a source-drain electrode; and
a capacitor including a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order, and a passivation film covering the thin film transistor and the capacitor,
wherein
the to electrode is thinner than the bottom electrode.
3. A display device comprising a display element in a thin film transistor substrate, the thin film transistor substrate including:
a substrate;
a thin film transistor including a gate electrode, a gate insulating film, an oxide semiconductor layer and a source-drain electrode; and
a capacitor including a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order,
wherein,
the display element is an organic light emitting element having an organic layer including a light emission layer between an anode and a cathode, and
the to electrode is thinner than the bottom electrode.
4. The display device according to claim 3 , wherein the top electrode in the capacitor is connected to one of the anode and the cathode.
5. A display device comprising a display element in a thin film transistor substrate, the thin film transistor substrate including:
a substrate;
a thin film transistor including a gate electrode, a gate insulating film, an oxide semiconductor layer and a source-drain electrode;
a capacitor including a bottom electrode, a capacitor insulating film, and a top electrode made of oxide semiconductor in order; and
a display region having the display element, and a drive unit,
wherein,
the display region includes scan lines, signal lines, and a plurality of pixels made by display elements arranged in matrix, and
the to electrode is thinner than the bottom electrode.
6. A thin film transistor substrate comprising:
a substrate;
a thin film transistor including a gate electrode, a gate insulating film, an oxide semiconductor layer, and a source-drain electrode; and
a capacitor including a first electrode, a second electrode made of oxide semiconductor, and a capacitor insulating film between the first electrode and the second electrode,
wherein,
at least one of the first electrode and the second electrode has a contact region which is in contact with the source-drain electrode, and
the second electrode is thinner than the first electrode.