IP Library Granted Patent US 9,052,591
Granted Patent B2
US 9,052,591 · App. 13/552,281 · Granted Jun 9, 2015

Resist composition and method for producing resist pattern

Inventors: Koji Ichikawa (Osaka, JP); Takahiro Yasue (Osaka, JP)
Assignee: SUMITOMO CHEMICAL COMPANY, LIMITED
G03F7/0045G03F7/0046G03F7/0397G03F7/2041
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,052,591
App. No.
13/552,281
Granted
Jun 9, 2015
Kind
B2
Abstract

A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator, wherein R 1 , A 1 , A 13 , A 14 , X 12 , R 3 , R 4 , m′ and n′ are defined in the specification.

Claims (23)

1. A resist composition comprising

a resin having a structural unit represented by the formula (I),

a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I),

an acid generator, and

a compound represented by the formula (II).

wherein R 1 represents a hydrogen atom or a methyl group;

A 1 represents a C 1 to C 6 alkanediyl group;

A 13 represents a C 1 to C 18 divalent aliphatic hydrocarbon group that optionally has one or more halogen atoms;

X 12 represents *—CO—O— or *—O—CO—, * represents a bond to A 13 ;

A 14 represents a C 1 to C 17 aliphatic hydrocarbon group that optionally has one or more halogen atoms;

wherein R 3 and R 4 in each occurrence independently represent a C 1 to C 12 hydrocarbon group, a C 1 to C 6 alkoxyl group, a C 2 to C 7 acyl group, a C 2 to C 7 acyloxy group, a C 2 to C 7 alkoxycarbonyl group, a nitro group or a halogen atom;

m′ and n′ independently represent an integer of 0 to 4.

2. The resist composition according to claim 1 , wherein A 1 in the formula (I) is an ethylene group.

3. The resist composition according to claim 1 , wherein A 13 in the formula (I) is a C 1 to C 6 perfluoro alkanediyl group.

4. The resist composition according to claim 1 , wherein X 12 in the formula (I) is *—CO—O—, * represents a bond to A 13 .

5. The resist composition according to claim 1 , wherein A 14 in the formula (I) is a cyclopropylmethyl, cyclopentyl, cyclohexyl, norbornyl or adamantyl group.

6. The resist composition according to claim 1 , which further comprises a solvent.

7. A method for producing a resist pattern comprising steps of;

(1) applying the resist composition of claim 1 onto a substrate;

(2) drying the applied composition to form a composition layer;

(3) exposing the composition layer;

(4) heating the exposed composition layer, and

(5) developing the heated composition layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 24, 2012
From: ICHIKAWA, KOJI; YASUE, TAKAHIRO
To: SUMITOMO CHEMICAL COMPANY, LIMITED
Reel/Frame 028846/0141 →
Priority Claims (1)
JP 2011-157532 · Jul 19, 2011 · national
Continuity (1)
Related Publication 20130022924A1 · Jan 24, 2013