Detection circuits for batteries

1. A detection circuit comprising:

a sensing unit that provides a sensed signal and a bias signal by sensing an input signal representing a status of a battery;

a signal reference source, coupled to said sensing unit and comprising a reference node, that determines a signal reference at said reference node and that receives and is biased by said sensed signal at said reference node to generate a trigger signal indicative of a difference between said sensed signal and said signal reference, wherein said signal reference source comprises:

a first transistor and a second transistor, coupled to said reference node, that receive and are biased by said sensed signal via said reference node; and

a third transistor and a fourth transistor, coupled to a connection node, that receive and are biased by said bias signal via said connection node,

wherein said third transistor comprises a first terminal coupled to said first transistor and comprises a second terminal coupled to said connection node, and wherein said fourth transistor comprises a first terminal coupled to said second transistor and comprises a second terminal coupled to said connection node; and

a detecting unit, coupled to said signal reference source, that generates an output signal according to said trigger signal to indicate an abnormal condition is present in said battery.

2. The detection circuit as claimed in claim 1 , wherein said signal reference source comprises a bandgap reference circuit capable of providing, at said reference node, a voltage reference that remains substantially constant if an ambient condition varies, and wherein said signal reference comprises said voltage reference.

3. The detection circuit as claimed in claim 2 , wherein said bandgap reference circuit compares said sensed signal with said voltage reference to generate said trigger signal.

4. The detection circuit as claimed in claim 1 , wherein said detecting unit comprises a switch controlled by said trigger signal, and wherein said detecting unit generates said output signal based on a state of said switch.

5. The detection circuit as claimed in claim 4 , wherein if said sensed signal is greater than said signal reference, then said switch is in a first state and said output signal is at a first output level; and wherein if said sensed signal is less than said signal reference, then said first switch is in a second state and said output signal is at a second output level.

6. The detection circuit as claimed in claim 1 , wherein said abnormal condition comprises an over-voltage condition of said battery, and wherein said signal reference represents an over-voltage threshold of said battery.

7. The detection circuit as claimed in claim 1 , wherein said abnormal condition comprises an under-voltage condition of said battery, and wherein said signal reference represents an under-voltage threshold of said battery.

8. The detection circuit as claimed in claim 1 , wherein said sensing unit comprises a plurality of resistive components coupled in series and capable of providing said sensed signal and said bias signal.

9. A method comprising:

generating a sensed signal and a bias signal by sensing an input signal representing a status of a battery;

determining a signal reference at a reference node inside a signal reference source;

providing said sensed signal to said reference node and said bias signal to a connection node thereby biasing said signal reference source;

generating a trigger signal to indicate a difference between said sensed signal and said signal reference based on said determining and said providing; and

generating an output signal according to said trigger signal to indicate an abnormal condition is present in said battery,

wherein said providing comprises:

providing said sensed signal to said reference node to bias a first transistor and a second transistor;

providing said bias signal to said connection node to bias a third transistor and a fourth transistor,

wherein said third transistor comprises a first terminal coupled to said first transistor and comprises a second terminal coupled to said connection node, and wherein said fourth transistor comprises a first terminal coupled to said second transistor and comprises a second terminal coupled to said connection node.

10. The method as claimed in claim 9 , wherein said generating said trigger signal comprises :

providing a voltage reference at said reference node using a bandgap reference circuit, wherein said signal reference comprises said voltage reference, and wherein said voltage reference remains substantially constant if an ambient condition varies; and

comparing said sensed signal with said voltage reference at said reference node to generate said trigger signal.

11. The method as claimed in claim 9 , wherein said generating said output signal comprises:

controlling a switch via said trigger signal; and

generating said output signal according to a state of said switch.

12. The method as claimed in claim 11 , wherein said generating said output signal according to said state of said switch comprises:

generating said output signal at a first output level according to said switch in a first state, if said sensed signal is greater than said signal reference; and

generating said output signal at a second output level according to said switch in a second state, if said sensed signal is less than said signal reference.

13. The method as claimed in claim 9 , wherein said abnormal condition is a condition selected from the group consisting of: an over-voltage condition of said battery and an under-voltage condition of said battery.

14. A detection circuit comprising:

a first input terminal that receives a sensed signal representing a status of a battery;

a second input terminal that receives a bias signal representing said status of said battery;

an output terminal that generates an output signal to indicate an abnormal condition is present in said battery; and

detection circuitry, coupled to said first and second input terminals and said output terminal, that determines a signal reference at a reference node inside said detection circuitry, and that receives said sensed signal at said reference node to generate said output signal based on a difference between said sensed signal and said signal reference, wherein said detection circuitry comprises:

a first transistor and a second transistor, coupled to said reference node, that receive and are biased by said sensed signal via said reference node; and

a third transistor and a fourth transistor, coupled to a connection node, that receive and are biased by said bias signal via said connection node,

wherein said third transistor comprises a first terminal coupled to said first transistor and comprises a second terminal coupled to said connection node, and wherein said fourth transistor comprises a first terminal coupled to said second transistor and comprises a second terminal coupled to said connection node.

15. The detection circuit as claimed in claim 14 , wherein said detection circuitry comprises a bandgap reference circuit capable of providing, at said reference node, a voltage reference that remains substantially constant if an ambient condition varies, and wherein said signal reference comprises said voltage reference.

16. The detection circuit as claimed in claim 15 , wherein said sensed signal and said voltage reference are compared at said reference node using said bandgap reference circuit, and a trigger signal is generated at a trigger node of said bandgap reference circuit to indicate a difference between said sensed signal and said voltage reference.

17. The detection circuit as claimed in claim 14 , wherein said detection circuitry comprises a switch controlled based on said difference between said sensed signal and said signal reference, and wherein said output signal is generated based on a state of said switch.

18. The detection circuit as claimed in claim 17 , wherein if said sensed signal is greater than said voltage reference, then said switch is in a first state and said output signal is at a first output level; and wherein if said sensed signal is less than said voltage reference, then said first switch is in a second state and said output signal is at a second output level.

19. The detection circuit as claimed in claim 14 , wherein said abnormal condition comprises an over-voltage condition of said battery, and wherein said signal reference represents an over-voltage threshold of said battery.

20. The detection circuit as claimed in claim 14 , wherein said abnormal condition comprises an under-voltage condition of said battery, and wherein said signal reference represents an under-voltage threshold of said battery.