Integrated circuit with sensor and method of manufacturing such an integrated circuit
View Patent ↗Disclosed is an integrated circuit comprising a substrate ( 10 ) carrying a plurality of circuit elements; a metallization stack ( 12, 14, 16 ) interconnecting said circuit elements, said metallization stack comprising a patterned upper metallization layer comprising a first metal portion ( 20 ) and a second metal portion ( 21 ); a passivation stack ( 24, 26, 28 ) covering the metallization stack; a gas sensor including a sensing material portion ( 32, 74 ) on the passivation stack; a first conductive portion ( 38 ) extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and a second conductive portion ( 40 ) extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion. A method of manufacturing such an IC is also disclosed.
1. An integrated circuit comprising:
a substrate carrying a plurality of circuit elements;
a metallization stack interconnecting the circuit elements, the metallization stack comprising a patterned upper metallization layer comprising a first metal portion and a second metal portion;
a passivation stack covering the metallization stack;
a gas sensor including a sensing material portion on the passivation stack;
a first conductive portion extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion;
a second conductive portion extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion;
an aluminum support layer in between the sensing material portion and the passivation stack; and
a recess comprising a void in the aluminum support layer in between the sensing material portion and the passivation stack, such that the first and the second conductive portions are electrically insulated from the aluminum support layer by the recess,
wherein the sensing material portion is sensitive for carbon dioxide,
wherein the sensing material portion comprises a porous layer that is an anodic aluminum oxide and comprises at least one metal oxide that is ZnO,
wherein the anodic aluminum oxide is a substrate layer functionalized with ZnO, and
wherein the upper metallization layer comprises a heating element that is implemented as a meander line.
2. The integrated circuit of claim 1 , wherein sidewalls of the sensing material portion are separated from the first and second conductive portions by respective electrically insulating sidewall spacers.
3. A method of manufacturing an integrated circuit, comprising:
providing a substrate carrying a plurality of circuit elements;
forming a metallization stack interconnecting the circuit elements, the metallization stack comprising a patterned upper metallization layer comprising a first metal portion and a second metal portion;
forming a passivation stack covering the metallization stack;
forming a gas sensor including a sensing material portion on the passivation stack;
opening the passivation stack to expose the first metal portion and the second metal portion;
forming a first conductive portion between a first region of the sensing material portion and the first metal portion and second conductive portion between a second region of the sensing material portion and the second metal portion;
forming an aluminum support layer in between the sensing material portion and the passivation stack; and
forming a recess comprising a void in the aluminum support layer in between the sensing material portion and the passivation stack, such that the first and the second conductive portions are electrically insulated from the aluminum support layer by the recess
wherein the sensing material portion is sensitive for carbon dioxide,
wherein the sensing material portion comprises a porous layer that is an anodic aluminum oxide and comprises at least one metal oxide that is ZnO,
wherein the anodic aluminum oxide is a substrate layer functionalized with ZnO, and
wherein the upper metallization layer comprises a heating element that is implemented as a meander line.
4. The method of claim 3 , further comprising forming electrically insulating sidewall spacers adjacent to the sensing material portion prior to forming the first conductive portion and the second conductive portion.
5. The method of claim 3 , wherein the step of forming the gas sensor including the sensing material portion on the passivation stack comprises:
forming a substrate portion on the passivation stack;
etching pores into the substrate portion; and
at least partially filling the pores with at least one metal oxide.
6. An integrated circuit comprising:
a substrate carrying a plurality of circuit elements;
a metallization stack interconnecting the circuit elements, the metallization stack comprising a patterned upper metallization layer comprising a first metal portion and a second metal portion;
a passivation stack covering the metallization stack;
a gas sensor including a sensing material portion on the passivation stack;
a first conductive portion extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion; and
a second conductive portion extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion,
wherein the sensing material portion is sensitive for carbon dioxide,
wherein the sensing material portion comprises a porous substrate portion of silicon oxide or silicon nitride and comprises at least one metal oxide that is ZnO,
wherein the porous substrate portion is functionalized with ZnO, and
wherein sidewalls of the sensing material portion are separated from the first and second conductive portions by respective electrically insulating sidewall spacers.
7. An integrated circuit comprising:
a substrate carrying a plurality of circuit elements;
a metallization stack interconnecting the circuit elements, the metallization stack comprising a patterned upper metallization layer comprising a first metal portion and a second metal portion;
a passivation stack covering the metallization stack;
a gas sensor including a sensing material portion on the passivation stack, wherein the gas sensor is a thermal conductivity sensor;
a first conductive portion extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion;
a second conductive portion extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion;
a dielectric layer on the passivation stack;
a cavity for receiving a gas composition to be monitored, wherein the sensing material portion has a temperature-dependent resistivity, is suspended in the cavity, and is a heating element;
a moisture barrier realized as a Ta 2 O 5 layer separating the passivation stack from the cavity; and
a patterned support structure extending across the cavity and comprising a mesh or grid,
wherein silicon carbide is used as a support structure material for the patterned support structure,
wherein the heating element is supported by the patterned support structure, and
wherein the patterned support structure is on top of the heating element.
8. The integrated circuit of claim 7 , further comprising a support structure extending across the cavity, the sensing material portion being supported by the support structure.
9. An integrated circuit comprising:
a substrate carrying a plurality of circuit elements;
a metallization stack interconnecting the circuit elements, the metallization stack comprising a patterned upper metallization layer comprising a first metal portion and a second metal portion;
a passivation stack covering the metallization stack;
a gas sensor including a sensing material portion on the passivation stack, wherein the gas sensor is a thermal conductivity sensor;
a first conductive portion extending through the passivation stack connecting a first region of the sensing material portion to the first metal portion;
a second conductive portion extending through the passivation stack connecting a second region of the sensing material portion to the second metal portion;
a dielectric layer on the passivation stack;
a cavity for receiving a gas composition to be monitored; and
a heating element thermally coupled to the sensing material portion,
wherein the sensing material portion has a temperature-dependent resistivity, the sensing material portion being suspended in the cavity, and
wherein the heating element and the sensing material portion are separate structures;
a moisture barrier realized as a Ta 2 O 5 layer separating the passivation stack from the cavity; and
a patterned support structure extending across the cavity and comprising a mesh or grid,
wherein silicon carbide is used as a support structure material for the patterned support structure,
wherein the heating element is supported by the patterned support structure, and
wherein the patterned support structure is on top of the heating element.
10. The integrated circuit of claim 9 , further comprising a support structure extending across the cavity, the sensing material portion being supported by the support structure.