IP Library Granted Patent US 9,098,152
Granted Patent B2
US 9,098,152 · App. 13/556,968 · Granted Aug 4, 2015

Dielectric layer for touch sensor stack

Inventor: David Brent Guard (Southampton, GB)
Assignee: Atmel Corporation
G06F3/044G06F2203/04103Y10T29/49124
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Quick Facts
Patent No.
US 9,098,152
App. No.
13/556,968
Granted
Aug 4, 2015
Kind
B2
Abstract

In one embodiment, a touch sensor includes a substrate comprising a first surface. The touch sensor also includes a plurality of first electrodes comprising one or more conductive materials on the first surface. The touch sensor further includes a dielectric layer attached at least indirectly to the first electrodes and at least a portion of the first surface. The dielectric layer is configured to face an electronic display panel with an air gap between the dielectric layer and the electronic display panel. The dielectric layer has a refractive index of less than approximately 1.5.

Claims (35)

1. A touch sensor comprising:

a substrate comprising a first surface configured to face toward an electronic display panel when coupled to the electronic display panel;

a plurality of first electrodes comprising one or more conductive materials on the first surface; and

a dielectric layer attached directly to the first electrodes and at least a portion of the first surface, the dielectric layer being configured to face toward the electronic display panel when coupled to the electronic display panel, with an air gap between the dielectric layer and the electronic display panel, the dielectric layer having a refractive index of less than approximately 1.5.

2. The touch sensor of claim 1 , further comprising:

a plurality of second electrodes comprising one or more conductive materials on a second surface of the first substrate or a second substrate;

a second dielectric layer attached at least indirectly to the second electrodes and at least a portion of the second surface; and

a substantially transparent cover panel disposed on the dielectric layer.

3. The touch sensor of claim 1 , wherein the conductive materials comprise indium tin oxide, a plurality of fine lines of metal, or a plurality of carbon nanotubes.

4. The touch sensor of claim 1 , wherein the refractive index of the dielectric layer is less than approximately 1.5 and greater than approximately 1.

5. The touch sensor of claim 1 , wherein the refractive index of the dielectric layer is less than approximately 1.5 and greater than or equal to approximately 1.1.

6. The touch sensor of claim 1 , wherein the refractive index of the dielectric layer is less than approximately 1.5 and greater than or equal to approximately 1.25.

7. The touch sensor of claim 1 , wherein the refractive index of the dielectric layer is less than approximately 1.45 and greater than or equal to approximately 1.25.

8. A device comprising:

a touch sensor comprising:

a substrate comprising a first surface configured to face toward an electronic display panel when coupled to the electronic display panel;

a plurality of first electrodes comprising one or more conductive materials on the first surface; and

a dielectric layer attached directly to the first electrodes and at least a portion of the first surface, the dielectric layer being configured to face toward the electronic display panel when coupled to the electronic display panel, with an air gap between the dielectric layer and the electronic display panel, the dielectric layer having a refractive index of less than approximately 1.5; and

one or more computer-readable non-transitory storage media coupled to the touch sensor and embodying logic that is configured when executed to control the touch sensor.

9. The device of claim 8 , wherein the touch sensor further comprises:

a plurality of second electrodes comprising one or more conductive materials on a second surface of the first substrate or a second substrate;

a second dielectric layer attached at least indirectly to the second electrodes and at least a portion of the second surface; and

a substantially transparent cover panel disposed on the dielectric layer.

10. The device of claim 8 , wherein the conductive materials comprise indium tin oxide, a plurality of fine lines of metal, or a plurality of carbon nanotubes.

11. The device of claim 8 , wherein the refractive index of the dielectric layer is less than approximately 1.5 and greater than approximately 1.

12. The device of claim 8 , wherein the refractive index of the dielectric layer is less than approximately 1.5 and greater than or equal to approximately 1.1.

13. The device of claim 8 , wherein the refractive index of the dielectric layer is less than approximately 1.5 and greater than or equal to approximately 1.25.

14. The device of claim 8 , wherein the refractive index of the dielectric layer is less than approximately 1.45 and greater than or equal to approximately 1.25.

15. The device of claim 8 , wherein the device comprises the electronic display panel.

16. A method for forming a touch sensor, the method comprising:

providing a substrate comprising a first surface configured to face toward an electronic display panel when coupled to the electronic display panel;

forming a plurality of first electrodes comprising one or more conductive materials on the first surface; and

attaching a dielectric layer directly to the first electrodes and at least a portion of the first surface, the dielectric layer being configured to face toward the electronic display panel when coupled to the electronic display panel, with an air gap between the dielectric layer and the electronic display panel, the dielectric layer having a refractive index of less than approximately 1.5.

17. The method of claim 16 , wherein the refractive index of the dielectric layer is less than approximately 1.5 and greater than approximately 1.

18. The method of claim 16 , wherein the refractive index of the dielectric layer is less than approximately 1.45 and greater than or equal to approximately 1.25.

Assignments (9)
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: ATMEL CORPORATION
Reel/Frame 059114/0333 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 5, 2019
From: MICROCHIP TECHNOLOGY INC.; ATMEL CORPORATION; MICROCHIP TECHNOLOGY GERMANY GMBH
To: NEODRÓN LIMITED
Reel/Frame 048259/0840 →
RELEASE OF SECURITY INTEREST IN CERTAIN PATENT RIGHTS Recorded Dec 21, 2018
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; ATMEL CORPORATION
Reel/Frame 047976/0884 →
RELEASE OF SECURITY INTEREST IN CERTAIN PATENT RIGHTS Recorded Dec 21, 2018
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; ATMEL CORPORATION
Reel/Frame 047976/0937 →
SECURITY INTEREST Recorded Aug 29, 2017
From: ATMEL CORPORATION
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 043440/0467 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT COLLATERAL Recorded Apr 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: ATMEL CORPORATION
Reel/Frame 038376/0001 →
PATENT SECURITY AGREEMENT Recorded Jan 3, 2014
From: ATMEL CORPORATION
To: MORGAN STANLEY SENIOR FUNDING, INC. AS ADMINISTRATIVE AGENT
Reel/Frame 031912/0173 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 9, 2012
From: ATMEL TECHNOLOGIES U.K. LIMITED
To: ATMEL CORPORATION
Reel/Frame 028755/0861 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 24, 2012
From: GUARD, DAVID BRENT
To: ATMEL TECHNOLOGIES U.K. LIMITED
Reel/Frame 028626/0968 →
Continuity (1)
Related Publication 20140028570A1 · Jan 30, 2014