Semiconductor integrated circuit
View Patent ↗A semiconductor integrated circuit includes constant current circuit, starter circuit and power supply start-up circuit. In the constant current circuit, first current mirror circuit includes first and second transistors, and second current mirror circuit includes third and fourth transistors that are connected to first and second nodes. In the starter circuit, a potential of first node controls sixth transistor, seventh transistor is connected to third node, gate electrode of the seventh transistor is at ground potential, a capacitance element is connected to fourth node, and a potential of fourth node controls fifth transistor, which supplies start-up current to the constant current circuit via second node. In the power supply start-up circuit, source electrode of eighth transistor is fixed at power supply voltage, gate electrode is at ground potential, and drain electrode supplies power to the other circuits.
1. A semiconductor integrated circuit comprising:
a constant current circuit including:
a first current mirror circuit that includes a first transistor and a second transistor, and
a second current mirror circuit that includes a third transistor that is connected to a first node to which current flows from the first transistor, and a fourth transistor that is connected to a second node to which current flows from the second transistor;
a starter circuit including:
a sixth transistor that uses a potential of the first node as a control voltage,
a seventh transistor that is connected to a third node to which current flows from the sixth transistor, a gate electrode of the seventh transistor being at a ground potential,
a capacitance element that is connected to a fourth node to which current flows from the seventh transistor, and
a fifth transistor that uses a potential of the fourth node as a control voltage, and that supplies start-up current to the constant current circuit via the second node; and
a power supply start-up circuit including an eighth transistor, of which a source electrode is fixed at a power supply voltage and a gate electrode is at the ground potential, and that supplies power from a drain electrode to the constant current circuit and the starter circuit.
2. The semiconductor integrated circuit according to claim 1 , further comprising a voltage reduction portion that reduces a potential of the drain electrode of the eighth transistor toward the ground potential when the eighth transistor is non-conducting.
3. The semiconductor integrated circuit according to claim 2 , wherein the voltage reduction portion comprises a resistor, of which one end is connected to the drain electrode of the eighth transistor and the other end is at the ground potential.
4. The semiconductor integrated circuit according to claim 2 , wherein the voltage reduction portion comprises:
a resistor, an end of which is at the ground potential; and
a ninth transistor of which a drain electrode is connected to the drain electrode of the eighth transistor, a gate electrode is at the ground potential, and a source electrode is connected to another end of the resistor.
5. The semiconductor integrated circuit according to claim 4 , wherein the ninth transistor is a depletion-mode transistor.