Silicon carbide lamina
View Patent ↗A method of fabricating an electronic device includes providing a silicon carbide or diamond-like carbon donor body and implanting ions into a first surface of the donor body to define a cleave plane. After implanting, an epitaxial layer is formed on the first surface, and a temporary carrier is coupled to the epitaxial layer. A lamina is cleaved from the donor body at the cleave plane, and the temporary carrier is removed from the lamina. In some embodiments a light emitting diode or a high electron mobility transistor is fabricated from the lamina and epitaxial layer.
1. A method of fabricating an electronic device, the method comprising the steps of:
providing a donor body having a first surface, wherein the donor body comprises silicon carbide or diamond-like carbon;
implanting ions into the first surface of the donor body to define a cleave plane;
after the step of implanting, forming an epitaxial layer on the first surface of the donor body using heteroepitaxy;
coupling a temporary carrier to the epitaxial layer on the first surface of the donor body;
cleaving a lamina from the donor body at the cleave plane, wherein the cleave plane forms a back surface of the lamina, wherein the first surface of the donor body is a front surface of the lamina, and wherein the lamina has a cleaved thickness from the front surface to the back surface; and
removing the temporary carrier from the lamina.
2. The method of claim 1 wherein the temporary carrier is coupled to the epitaxial layer using a vacuum force.
3. The method of claim 1 wherein the temporary carrier is coupled to the epitaxial layer using an electrostatic force.
4. The method of claim 1 wherein the temporary carrier is coupled to the epitaxial layer using an adhesive.
5. The method of claim 1 further comprising one or more intervening layers between the temporary carrier and the epitaxial layer.
6. The method of claim 5 wherein the intervening layers comprise at least one of the group consisting of metal electrodes, transparent conductors and reflecting layers.
7. The method of claim 1 wherein the epitaxial layer comprises at least one material chosen from the group consisting of GaN, doped SiC, GaAs, InGaAs, AlGaAs, InGaAlAs, InP, GaP, InGaN, InSb, ZnSe, ZnS, AlN and AlGaN.
8. The method of claim 1 wherein the step of cleaving occurs after the step of forming an epitaxial layer.
9. The method of claim 1 wherein the step of cleaving occurs at an exfoliation temperature, wherein the step of forming occurs at an epitaxial temperature, and wherein the exfoliation temperature is greater than the epitaxial temperature.
10. The method of claim 9 wherein the exfoliation temperature is at least 900 degrees Celsius.
11. The method of claim 9 wherein the epitaxial temperature is less than 900 degrees Celsius.
12. The method of claim 1 wherein the thickness of the lamina is between 3-20 microns.
13. The method of claim 1 further comprising the step of fabricating a light emitting diode with the lamina and epitaxial layer.
14. The method of claim 13 wherein the thickness of the lamina remains substantially the same between the steps of cleaving the lamina and fabricating the light emitting diode.
15. The method of claim 14 wherein the thickness of the lamina remains within 20% deviation of its cleaved thickness.
16. The method of claim 1 further comprising the step of fabricating a high electron mobility transistor with the lamina and epitaxial layer.
17. The method of claim 16 wherein the thickness of the lamina remains substantially the same between the steps of cleaving the lamina and fabricating the high electron mobility transistor.
18. The method of claim 17 wherein the thickness of the lamina remains within 20% deviation of its cleaved thickness.