Capacitive device and method for fabricating the same

1. A capacitive device comprising:

a first capacitor including a first wiring layer, a first dielectric film, and a first conductive layer;

a first insulating layer on the first capacitor;

a second capacitor on the first insulating layer, wherein the second capacitor includes a second conductive layer, a second dielectric film, and a third conductive layer;

a second insulating layer on the second capacitor;

a second wiring layer on the second insulating layer, wherein the second wiring layer includes a first connection wire and a second connection wire;

a first via through the first insulating layer and the first dielectric film, and connecting the first wiring layer to the second conductive layer;

a second via through the second insulating layer, and connecting the third conductive layer to the second wiring layer;

a third via through the first insulating layer and the second insulating layer, and connecting the first connection wire to the first conductive layer; and

a fourth via through the first insulating layer, the second insulating layer, and the first dielectric film, and connecting the second connection wire to the first wiring layer.

2. The capacitive device as claimed in claim 1 , wherein the second capacitor is vertically aligned with the first conductive layer.

3. The capacitive device as claimed in claim 1 , wherein the first conductive layer has a portion that is not vertically aligned with and that does not overlap with the second capacitor.

4. The capacitive device as claimed in claim 1 , wherein the first via passes through the first conductive layer, and the third via passes through the second capacitor.

5. The capacitive device as claimed in claim 4 , wherein the first conductive layer has a first opening through which the first via passes, and a portion of the first insulating layer is between the first conductive layer and the first via.

6. The capacitive device as claimed in claim 4 , wherein the second capacitor has a second opening through which the third via passes, and a portion of the second insulating layer is between the second capacitor and the third via.

7. The capacitive device as claimed in claim 1 , wherein the first via is outside an outer periphery of the first conductive layer, and the third via is outside an outer periphery of the second capacitor.

8. The capacitive device as claimed in claim 1 , wherein the first and second wiring layers comprise a material that is different from that of the first, second, and third conductive layers, and the thickness of the first wiring layer is different from that of the second wiring layer.

9. The capacitive device as claimed in claim 1 , wherein each of the second conductive layer, the second dielectric film, and the third conductive layer has an area that is the same as an area of the first conductive layer.

10. A method for fabricating a capacitive device, comprising:

forming a first wiring layer, a first dielectric film, and a first conductive layer on a substrate;

forming a first insulating layer on the first conductive layer;

forming a first via in contact with the first wiring layer, the first via passing through the first insulating layer and the first dielectric film;

forming a second conductive layer, a second dielectric film, and a third conductive layer on the first insulating layer and the first via;

forming a second insulating layer on the first insulating layer and the third conductive layer;

forming (i) a second via in contact with the third conductive layer, the second via passing through the second insulating layer, (ii) a third via in contact with the first conductive layer, the third via passing through the second insulating layer and the first insulating layer, and (iii) a fourth via in contact with the first wiring layer, the fourth via passing through the second insulating layer, the first insulating layer, and the first dielectric film; and

forming a second wiring layer on the second insulating layer in contact with the second, third, and fourth vias.

11. The method as claimed in claim 10 , further comprising forming a first opening through the first conductive layer and a first portion of the first dielectric film before forming the first insulating layer, wherein the first via passes through the first opening.

12. The method as claimed in claim 11 , further comprising forming a second opening adjacent to the second conductive layer, the second dielectric film, and the third conductive layer and through a first portion of the first insulating layer before forming the second insulating layer, wherein the third via passes through the second opening.

13. The method as claimed in claim 12 , wherein the second conductive layer, the second dielectric film, and the third conductive layer are vertically aligned with the first conductive layer.

14. The method as claimed in claim 12 , further comprising:

forming a third opening that exposes a second portion of the first dielectric film, the second portion of the first dielectric film being different from the first portion of the first dielectric film; and

forming a fourth opening that exposes a second portion of the first insulating layer and is vertically aligned with the third opening, wherein the fourth via passes through the second opening and the fourth opening, the second portion of the first insulating layer being different from the first portion of the first insulating layer.

15. The method as claimed in claim 10 , further comprising patterning the first conductive layer, exposing a first portion of the first dielectric film adjacent to a first end or edge of the patterned first conductive layer and a second portion of the first dielectric film adjacent to a second end or edge of the patterned first conductive layer before forming a first insulating layer, wherein the first via is in the first portion of the patterned first conductive layer and the fourth via is in the second portion of the patterned first conductive layer.

16. The method as claimed in claim 15 , further comprising patterning the third conductive layer, the second dielectric film, and the second conductive layer to form a third opening that exposes a portion of the second insulating layer such that a portion of the first conductive layer does not vertically overlap the third conductive layer, the second dielectric film, and the second conductive layer.

17. The method as claimed in claim 16 , wherein the third via and the fourth via pass through the third opening.

18. The method as claimed in claim 10 , wherein forming a second wiring layer includes:

forming a first connection wiring layer on the second insulating layer in contact with the second via and the third via; and

forming a second connection wiring layer on the second insulating layer in contact with the fourth via, and separate from the first connection wiring layer.