Method for depositing a silicon oxide layer of same thickness on silicon and on silicon-germanium
A method for depositing a silicon oxide layer on a substrate including a silicon region and a silicon-germanium region, including the steps of: forming a very thin silicon layer having a thickness ranging from 0.1 to 1 nm above silicon-germanium; and depositing a silicon oxide layer on the substrate.
1. A method for depositing a silicon oxide layer on a substrate, the substrate comprising a silicon region and a silicon-germanium region, the method comprising:
forming, above the silicon-germanium region, a very thin silicon layer having a thickness between 0.1 and 1 nm;
depositing, on the silicon layer and the silicon region, a silicon oxide layer; and
wherein the silicon-germanium region is formed of a silicon-germanium layer having an upper surface substantially at a same level as an upper surface of the silicon region,
wherein forming the silicon layer comprises forming the silicon layer in an epitaxy chamber previously used to form the silicon-germanium region.
2. The method of claim 1 , wherein depositing the silicon oxide layer comprises depositing the silicon oxide layer by chemical vapor deposition.
3. The method of claim 1 , further comprising, prior to depositing the silicon oxide layer, performing chemical cleaning.
4. The method of claim 1 , further comprising:
forming the silicon-germanium region in the epitaxy chamber in the presence of a germanium precursor and of a silicon precursor, wherein
forming the silicon layer further comprises, after forming the silicon-germanium region, stopping introduction of the germanium precursor into the expitaxy chamber.
5. The method of claim 4 , further comprising decreasing a temperature of the substrate prior to or during the forming of the silicon layer.
6. The method of claim 5 , wherein the temperature of the substrate is between 550 and 650° C. during the forming of the silicon-germanium region, and wherein the temperature of the substrate is between 450 and 550° C. during the forming of the very thin silicon layer.
7. The method of claim 4 , wherein the silicon precursor is a first silicon precursor, and wherein forming the silicon layer further comprises, after forming the silicon-germanium region:
stopping introduction of the silicon precursor into the epitaxy chamber, and
introducing a second silicon precursor into the expitaxy chamber, the second silicon precursor being a more chlorinated silicon precursor species than the first silicon precursor.
8. The method of claim 4 , wherein forming the silicon layer further comprises, after forming the silicon-germanium region, introducing HCl gas into the epitaxy chamber.
9. A method for depositing a silicon oxide layer on a substrate, the substrate comprising a silicon region and a silicon-germanium region, the method comprising:
forming, above the silicon-germanium region and at a rate less than or equal to 0.1 nm/minute, a silicon layer having a thickness between 0.1 and 1 nm;
depositing, on the silicon layer and the silicon region, a silicon oxide layer; and
wherein the silicon-germanium region is formed of a silicon-germanium layer having an upper surface substantially at a same level as an upper surface of the silicon region.
10. The method of claim 9 , wherein forming the silicon layer at the rate less than or equal to 0.1 nm/minute comprises forming the silicon layer at a rate less than or equal to 0.01 nm/minute.
11. The method of claim 9 , wherein forming the silicon layer at the rate less than or equal to 0.1 nm/minute comprises forming the silicon layer at a rate between 0.01 nm/minute and 0.1 nm/minute.
12. The method of claim 9 , wherein forming the silicon layer comprises forming the silicon layer in an epitaxy chamber previously used to form the silicon-germanium region.