IP Library Granted Patent US 9,664,448
Granted Patent B2
US 9,664,448 · App. 13/561,456 · Granted May 30, 2017

Melting apparatus

Inventor: Nathan Stoddard (Beaverton, OR)
Assignee: Solar World Industries America Inc.
F27D3/1518C01B33/037C30B11/002C30B29/06F27B14/0806
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Quick Facts
Patent No.
US 9,664,448
App. No.
13/561,456
Granted
May 30, 2017
Kind
B2
Abstract

Apparatus for the melting of silicon comprising a container for holding pieces of silicon and at least one means for heating silicon inside the container, wherein the container comprises a tube extending in a longitudinal direction for holding pieces of silicon and a bottom, wherein the tube is arranged on the bottom, wherein the bottom comprises at least one outlet for letting out melted silicon, and wherein the means for heating comprises at least one coil.

Claims (30)

1. An apparatus for the melting of semiconductor feedstock, the apparatus comprising:

a container for holding pieces of solid feedstock; and

at least one heating means for heating the feedstock inside the container, wherein the container comprises a tube extending in a longitudinal direction for holding the pieces of feedstock and a bottom comprising an overflow pan, wherein the tube is arranged above the bottom, wherein the bottom comprises at least one outlet for letting out melted feedstock by overflow, wherein the heating means for heating comprises at least one coil consisting of a refractory material, said heating means further comprising a bottom heater arranged below the overflow pan, wherein said coil and the bottom heater are connected to an AC power source, respectively, wherein a predetermined rate of melting feedstock is attained by controlling power supplied to the coil, wherein a temperature of melted feedstock in the overflow pan is controlled by controlling power supplied to the bottom heater such that the melted feedstock in the overflow pan is maintained in a liquid state independent of control of the coil.

2. An apparatus according to claim 1 , wherein the overflow pan comprises at least one overflow spout as the outlet, wherein the overflow spout is arranged such that the overflow spout defines an overflow level, which is located at a height in a range of between 0.5 cm and 10 cm with respect to the longitudinal direction above a base of the overflow pan such that a level of melted feedstock in the overflow pan is constant.

3. An apparatus according to claim 1 , wherein the at least one outlet comprises a detention element for the detention of pieces of solid feedstock from the outlet.

4. An apparatus according to claim 3 , wherein the detention element comprises a weir which is arranged above a base of the overflow pan in a way, such that with respect to the longitudinal direction a lower edge of the weir is below the overflow level.

5. An apparatus according to claim 1 , wherein the coil is made of at least one of the following materials: tungsten, molybdenum, tantalum, graphite, silicon carbide and their compounds, wherein the coil is controlled independent of the bottom heater.

6. An apparatus according to claim 1 , wherein the semiconductor feedstock is silicon.

7. An apparatus according to claim 1 , wherein a load cell is positioned at a level beneath the melt pan to measure the outflow of melted feedstock.

8. An apparatus according to claim 1 , wherein a separate tube is provided for the direct introduction of a doping material into the melted volume.

9. An apparatus according to claim 1 , wherein a temperature of said container is controlled exclusively by said alternating current power source, said bottom heater and said coil, wherein at least said alternating power source connected to said coil is controlled such that a volume of liquid feedstock inside the container is kept constant.

10. An apparatus according to claim 1 , wherein said bottom heater is connected to a bottom heater alternating current power source, said coil being connected to a coil alternating current power source, wherein a temperature of said container is controlled exclusively by said bottom heater alternating current power source, said coil alternating current power source, said bottom heater and said coil.

11. An apparatus according to claim 1 , wherein said AC power source connected to said coil is a radio-frequency AC power source.

12. An apparatus according to claim 11 , wherein the frequency of the AC power source lies in a range of above 10 khz.

13. An apparatus according to claim 1 , wherein the coil and the bottom heater are inductive heaters.

14. An apparatus according to claim 1 , wherein the apparatus allows a continuous operation of melting feedstock.

15. An apparatus according to claim 1 , wherein a volume of liquid feedstock inside the container is kept constant.

16. An apparatus according to claim 15 , wherein a volume of liquid feedstock in the container is less than 10 liters.

17. An apparatus for melting semiconductor feedstock, the apparatus comprising:

a container for holding pieces of solid feedstock, said container comprising a bottom portion and a tube extending in a longitudinal direction for holding the pieces of feedstock, said bottom portion comprising an overflow pan, said tube being arranged above said bottom portion, said bottom portion comprising at least one discharge outlet for melted feedstock, wherein melted feedstock passes from an interior of said container to a position located outside of said interior of said container via said discharge outlet;

a refractory material coil comprising one or more of tungsten, molybdenum, tantalum, graphite and silicon carbide, at least a portion of said coil being located adjacent to said tube;

a bottom heater located adjacent to said bottom portion;

one or more alternating current power sources, said bottom heater and said coil being connected to said one or more alternating current power sources, wherein said bottom heater is controlled independently of said coil.

18. An apparatus according to claim 17 , wherein a predetermined rate of melting feedstock is attained by controlling power supplied to said coil and a temperature of the melted feedstock in the overflow pan is controlled by controlling power supplied to the bottom heater such that the melted feedstock in the overflow pan is maintained in a liquid state independent of control of the refractory material coil.

19. An apparatus for melting semiconductor feedstock, the apparatus comprising:

a container for holding pieces of solid feedstock, said container comprising overflow pan and a tube extending in a longitudinal direction for holding the pieces of feedstock, at least a portion of said overflow pan defining a bottom portion of said container, said tube being arranged above said bottom portion, said overflow pan comprising at least one outlet structure, said outlet structure being in communication with an interior of said container, wherein said outlet structure defines at least a portion of a flow path for delivering melted feedstock from a position in said interior of said container to a position outside of said interior of said container;

a refractory material coil comprising one or more of tungsten, molybdenum, tantalum, graphite and silicon carbide, at least a portion of said coil being located adjacent to said tube;

a bottom heater located adjacent to said overflow pan;

one or more alternating current power sources, said bottom heater and said coil being connected to said one or more alternating current power sources, wherein power is controlled to one or more of said bottom heater and said refractory material coil such that a constant level of liquid feedstock is maintained inside the container, wherein the refractory material coil and the bottom heater are independently controlled.

20. An apparatus according to claim 19 , wherein a predetermined rate of melting feedstock is attained by controlling the power supplied to said coil and a temperature of the melted feedstock in the overflow pan is controlled by controlling the power supplied to the bottom heater such that the melted feedstock in the overflow pan is maintained in a liquid state independent of control of the refractory material coil.

Assignments (11)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 16, 2025
From: SUNPOWER CORPORATION; SUNPOWER CORPORATION, SYSTEMS
To: UNIRAC, INC.
Reel/Frame 071302/0904 →
RELEASE OF SECURITY INTEREST Recorded Apr 1, 2025
From: SUNPOWER CORPORATION,
To: UNIRAC, INC.
Reel/Frame 070704/0860 →
SECOND LIEN PATENT SECURITY AGREEMENT Recorded Feb 14, 2024
From: SUNPOWER CORPORATION
To: GLAS AMERICAS LLC, AS COLLATERAL AGENT
Reel/Frame 066598/0964 →
SECURITY INTEREST Recorded Sep 13, 2022
From: SUNPOWER CORPORATION
To: BANK OF AMERICA, N.A., AS AGENT
Reel/Frame 061422/0566 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 16, 2019
From: SUNPOWER MANUFACTURING OREGON, LLC
To: SUNPOWER CORPORATION
Reel/Frame 048033/0954 →
CONFIRMATORY ASSIGNMENT Recorded Jan 16, 2019
From: SOLARWORLD AMERICAS INC.
To: SUNPOWER MANUFACTURING OREGON, LLC
Reel/Frame 048079/0119 →
CHANGE OF ADDRESS Recorded Nov 9, 2018
From: SOLARWORLD AMERICAS, INC.
To: SOLARWORLD AMERICAS, INC.
Reel/Frame 047493/0259 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNOR AND ASSIGNEE NAME PREVIOUSLY RECORDED AT REEL: 038254 FRAME: 0041. ASSIGNOR(S) HEREBY CONFIRMS THE CORRECTIVE ASSIGNMENT. Recorded Apr 29, 2016
From: SOLARWORLD INDUSTRIES AMERICA INC.
To: SOLARWORLD AMERICAS INC.
Reel/Frame 038572/0947 →
CORRECTIVE ASSIGNMENT TO CORRECT THE APPLICATION NUMBER PREVIOUSLY RECORDED AT REEL: 035477 FRAME: 0618. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Mar 25, 2016
From: SOLARWORLD INDUSTRIES AMERICA INC
To: SOLARWORLD AMERICAS INC
Reel/Frame 038254/0041 →
CHANGE OF NAME Recorded Apr 22, 2015
From: SOLARWORLD INDUSTRIES AMERICA INC.
To: SOLARWORLD AMERICAS INC.
Reel/Frame 035477/0618 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 30, 2012
From: STODDARD, NATHAN, DR.
To: SOLAR WORLD INDUSTRIES AMERICA INC.
Reel/Frame 028674/0897 →
Continuity (1)
Related Publication 20140027430A1 · Jan 30, 2014