Semiconductor device
A semiconductor device includes a semiconductor substrate having a first surface being an element formation surface, and a second surface opposite to the first surface; a through-hole formed to penetrate the semiconductor substrate from the first surface to the second surface; an insulating film formed on an inner wall of the through-hole; a barrier film formed on the inner wall of the through-hole with the insulating film interposed therebetween; and a conductive portion formed to fill the through-hole provided with the insulating film and the barrier film. A gettering site is formed in a portion of the semiconductor substrate around the through-hole at least near a side of the first surface.
1. A semiconductor device comprising:
a semiconductor substrate having a first surface being an element formation surface, and a second surface opposite to the first surface;
a through-hole formed to penetrate the semiconductor substrate from the first surface to the second surface;
an insulating film formed on an inner wall of the through-hole;
a barrier film formed on the inner wall of the through-hole with the insulating film interposed therebetween; and
a conductive portion formed to fill the through-hole provided with the insulating film and the barrier film,
wherein a gettering site is formed in a portion of the semiconductor substrate around the through-hole near the first surface only.
2. The semiconductor device of claim 1 , wherein a minimum distance from a center of the through-hole to the gettering site is shorter than a minimum distance from the center of the through-hole to an active element formation region in the semiconductor substrate.
3. The semiconductor device of claim 1 , wherein the gettering site is formed to surround the through-hole.
4. The semiconductor device of claim 1 , wherein a size of the through-hole decreases from the second surface toward the first surface.
5. The semiconductor device of claim 1 , wherein
an interconnect is formed on the first surface of the semiconductor substrate, and
the conductive portion is electrically connected to the interconnect.
6. The semiconductor device of claim 5 , wherein the conductive portion is electrically connected to the interconnect by a contact interposed between the conductive portion and the interconnect.
7. The semiconductor device of claim 1 , wherein
the through-hole includes a plurality of through-holes, and
the gettering site is formed to surround a through-hole group formed by two-dimensionally arranging three or more of the plurality of through-holes.
8. A stacked semiconductor device formed by stacking a plurality of semiconductor devices,
wherein at least one of the semiconductor devices is the semiconductor device of claim 1 .
9. The semiconductor device of claim 1 , wherein the gettering site is spaced apart from an active element formation region in the semiconductor substrate.
10. The semiconductor device of claim 1 , wherein a thickness of the barrier film in the through-hole is smaller at the first surface than at the second surface.
11. A semiconductor device comprising:
a semiconductor substrate having a first surface being an element formation surface, and a second surface opposite to the first surface;
a through-hole formed to penetrate the semiconductor substrate from the first surface to the second surface;
an insulating film formed on an inner wall of the through-hole;
a barrier film formed on the inner wall of the through-hole with the insulating film interposed therebetween; and
a conductive portion formed to fill the through-hole provided with the insulating film and the barrier film, wherein
a gettering site is formed in a portion of the semiconductor substrate around the through-hole at least near a side of the first surface,
the through-hole includes a plurality of through-holes, and
the gettering site is formed to surround a through-hole group formed by two-dimensionally arranging three or more of the plurality of through-holes.
12. The semiconductor device of claim 11 , wherein a minimum distance from a center of the through-hole to the gettering site is shorter than a minimum distance from the center of the through-hole to an active element formation region in the semiconductor substrate.
13. The semiconductor device of claim 11 , wherein the gettering site is formed to surround the through-hole.
14. The semiconductor device of claim 11 , wherein a size of the through-hole decreases from the second surface toward the first surface.
15. The semiconductor device of claim 11 , wherein
an interconnect is formed on the first surface of the semiconductor substrate, and
the conductive portion is electrically connected to the interconnect.
16. The semiconductor device of claim 15 , wherein the conductive portion is electrically connected to the interconnect by a contact interposed between the conductive portion and the interconnect.
17. A stacked semiconductor device formed by stacking a plurality of semiconductor devices,
wherein at least one of the semiconductor devices is the semiconductor device of claim 11 .
18. The semiconductor device of claim 11 , wherein
an insulating region is formed in a surface portion of the semiconductor substrate around the through-hole at a side of the first surface, and
the gettering site is formed under the insulating region.
19. The semiconductor device of claim 18 , wherein
an isolation is formed in the surface portion of the semiconductor substrate at the side of the first surface, and
the insulating region is formed to a substantially same depth as the isolation.
20. The semiconductor device of claim 18 , wherein the through-hole is formed from a lower surface of the insulating region to the second surface.