Method and structure for receiving a micro device
A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material.
1. A structure comprising:
a substrate;
a conductive layer on the substrate;
a micro light emitting diode (LED) device on the conductive layer, wherein the micro LED device comprises:
a micro p-n diode including sidewalls and a to surface;
a metallization stack between the micro p-n diode and the conductive layer; and
a quantum well layer within the micro p-n diode;
a passivation layer comprising a thermoset or thermoplastic material laterally surrounding the quantum well layer of the micro LED device; and
a second conductive layer spanning directly over the micro LED device and the passivation layer, and in electrical contact with the micro LED device;
wherein a top surface of the passivation layer adjacent sidewalls of the micro p-n diode is below the top surface of the micro p-n diode.
2. The structure of claim 1 , further comprising a barrier layer on the second conductive layer.
3. The structure of claim 1 , further comprising a cover above the micro LED device.
4. The structure of claim 3 , wherein the cover is conformal to a topography of the micro LED device.
5. The structure of claim 3 , further comprising a black matrix material around the micro LED device and underneath the cover.
6. The structure of claim 1 , wherein the passivation layer is transparent in the visible wavelength range.
7. The structure of claim 6 , wherein the passivation layer comprises benzocyclobutene (BCB).
8. The structure of claim 6 , wherein the passivation layer comprises epoxy.
9. The structure of claim 1 , wherein the second conductive layer comprises poly(3,4-ethylenedioxythiophene) (PEDOT).
10. The structure of claim 1 , further comprising a bonding layer between the metallization stack and the conductive layer.
11. The structure of claim 10 , wherein the bonding layer includes a material selected from the group consisting of indium, gold, silver, molybdenum, tin, aluminum, and silicon.
12. The structure of claim 1 , wherein the substrate is a lighting substrate.
13. The structure of claim 1 , wherein the substrate is a display substrate.
14. The structure of claim 13 , wherein the micro LED device is integrated into a pixel of the display substrate.
15. The structure of claim 14 , wherein the micro LED device is integrated into a subpixel of the pixel, wherein one of the conductive layer and the second conductive layer is an anode, and the other of the conductive layer and the second conductive layer is a cathode.
16. The structure of claim 15 , wherein the second conductive layer is transparent.
17. The structure of claim 16 , wherein the second conductive layer comprises a material selected from the group consisting of: indium-tin-oxide (ITO), indium-zinc-oxide (IZO), and poly(3,4-ethylenedioxythiophene) (PEDOT).
18. The structure of claim 16 , wherein the second conductive layer comprises nanoparticles selected from the group consisting of silver, gold, ITO, and indium-zinc-oxide (IZO).
19. The structure of claim 16 , wherein the second conductive layer is reflective to the visible wavelength range.
20. The structure of claim 16 , wherein the micro LED device is integrated into an active matrix pixel display.
21. The active matrix display of claim 20 , wherein the subpixel comprises a switching transistor, a driving transistor, and a storage capacitor.
22. The active matrix display of claim 20 , wherein each of the switching transistor and the driving transistor are a thin film transistor.
23. The structure of claim 16 , wherein the micro LED device is integrated into a passive matrix pixel display.
24. The structure of claim 15 , further comprising a cover above the subpixel.
25. The structure of claim 24 , further comprising a black matrix material around the micro LED device in the subpixel and underneath the cover.
26. The structure of claim 15 , wherein the subpixel emits a primarily blue light.
27. The structure of claim 26 , wherein the pixel further comprises a second subpixel that emits a primarily red light, and a third subpixel that emits a primarily green light.
28. The structure of claim 27 , wherein the subpixel that emits primarily blue light comprises a micro LED device with a micro p-n diode comprising a semiconductor material selected from the group consisting of gallium nitride (GaN), indium gallium nitride (InGaN), and zinc selenide (ZnSe).
29. The structure of claim 28 , wherein the subpixel that emits primarily green light comprises a micro LED device with a micro p-n diode comprising a semiconductor material selected from the group consisting of indium gallium nitride (InGaN), gallium nitride (GaN), gallium phosphide (GaP), aluminum gallium indium phosphide (AlGaInP), and aluminum gallium phosphide (AlGaP).
30. The structure of claim 28 , wherein the subpixel that emits primarily red light comprises a micro LED device with a micro p-n diode comprising a semiconductor material selected from the group consisting of aluminum gallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), aluminum gallium indium phosphide (AlGaInP), and gallium phosphide (GaP).
31. The structure of claim 1 , further comprising a layer that is reflective to the visible wavelength range over the micro LED device.