Light-emitting element, self-scanning light-emitting element array, optical writing head, and image forming apparatus
View Patent ↗Disclosed is a light-emitting element including a semiconductor substrate, an island structure formed on the semiconductor substrate and including at least a current confining layer and p-type and n-type semiconductor layers, a light-emitting thyristor formed in the island structure and having a pnpn structure, and a shift thyristor formed in the island structure and having a pnpn structure, wherein a groove portion having a depth such that the groove portion reaches at least the current confining layer is formed between a formation region of the shift thyristor of the island structure and a formation region of the light-emitting thyristor, and an oxidized region that is selectively oxidized from a side surface of the island structure and a side surface of the groove portion is formed in the current confining layer.
1. A light-emitting element comprising:
a semiconductor substrate;
an island structure formed on the semiconductor substrate and including at least a current confining layer and p-type and n-type semiconductor layers;
a light-emitting thyristor formed in the island structure and comprising a pnpn structure; and
a shift thyristor formed in the island structure and comprising a pnpn structure, wherein
the island structure defines n groove portions that are completely surrounded by side surfaces of the island structure so that each groove portion of the n groove portions correspond to holes defined in the island structure, wherein each groove portion of the n groove portions comprises a depth that reaches at least the current confining layer and each groove portion of the n groove portions is formed between a formation region of the shift thyristor of the island structure and a formation region of the light-emitting thyristor, and
an oxidized region that is selectively oxidized from a side surface of the island structure and a side surface of the groove portion is formed in the current confining layer.
2. The light-emitting element according to claim 1 , wherein
the groove portion extends toward a side from opposing side surfaces of the island structure.
3. The light-emitting element according to claim 1 , wherein
the n groove portions are disposed at equal intervals.
4. The light-emitting element according to claim 1 , wherein
the groove portion extends toward the inner side from any one of opposing side surfaces of the island structure.
5. The light-emitting element according to claim 1 , wherein
a non-oxidized region which is surrounded by an oxidized region that is oxidized from the side surface of the island structure and the side surface of the groove portion is formed in the current confining layer in the formation region of the light-emitting thyristor.
6. The light-emitting element according to claim 2 , wherein
a non-oxidized region which is surrounded by an oxidized region that is oxidized from the side surface of the island structure and the side surface of the groove portion is formed in the current confining layer in the formation region of the light-emitting thyristor.
7. The light-emitting element according to claim 3 , wherein
a non-oxidized region which is surrounded by an oxidized region that is oxidized from the side surface of the island structure and the side surface of the groove portion is formed in the current confining layer in the formation region of the light-emitting thyristor.
8. The light-emitting element according to claim 4 , wherein
a non-oxidized region which is surrounded by an oxidized region that is oxidized from the side surface of the island structure and the side surface of the groove portion is formed in the current confining layer in the formation region of the light-emitting thyristor.
9. The light-emitting element according to claim 1 , further comprising:
a gate electrode shared with the light-emitting thyristor and formed in the formation region of the shift thyristor of the island structure.
10. The light-emitting element according to claim 2 , further comprising:
a gate electrode shared with the light-emitting thyristor and formed in the formation region of the shift thyristor of the island structure.
11. The light-emitting element according to claim 3 , further comprising:
a gate electrode shared with the light-emitting thyristor and formed in the formation region of the shift thyristor of the island structure.
12. The light-emitting element according to claim 4 , further comprising:
a gate electrode shared with the light-emitting thyristor and formed in the formation region of the shift thyristor of the island structure.
13. The light-emitting element according to claim 9 , further comprising:
a diode formed in the island structure in a region of a pn layer separated from the light-emitting thyristor and the shift thyristor, wherein
an anode layer of the diode is shared with the gates of the light-emitting thyristor and the shift thyristor.
14. The light-emitting element according to claim 1 , further comprising:
a semiconductor multilayer reflecting mirror disposed between the pnpn structure of the light-emitting thyristor and the semiconductor substrate.
15. A self-scanning light-emitting element array comprising:
a plurality of the light-emitting elements according to claim 1 , wherein
a first transfer signal is applied to a cathode layer of the shift thyristor of each of odd-numbered island structures,
a second transfer signal different from the first transfer signal is applied to a cathode layer of the shift thyristor of each of even-numbered island structures, and
the gates of the shift thyristors of the adjacent island structures are electrically connected by the diode.
16. An optical writing head using the light-emitting element array according to claim 15 .
17. An image forming apparatus comprising:
the optical writing head according to claim 16 .