Piezoelectric device

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Quick Facts

Patent No.: US 9,136,820
App. No.: 13/563,169
Granted: Sep 15, 2015
Kind: B2

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Abstract

A piezoelectric device according to the present invention is provided with a pair of electrode films, a piezoelectric film sandwiched in between the pair of electrode films, and a stress control film which is in direct contact with a surface of at least one of the pair of electrode films, on the side where the electrode film is not in contact with the piezoelectric film, and which has a linear expansion coefficient larger than those of the relevant electrode film and the piezoelectric film.

Claims (47)

1. A piezoelectric device comprising:

a first electrode film;

a piezoelectric film provided on the first electrode film, the piezoelectric film being made of PZT (lead zirconate titanate), KNN (potassium sodium niobate), BT (barium titanate), LN (lithium niobate), BNT (bismuth sodium titanate), ZnO (zinc oxide), or AlN (aluminum nitride);

a second electrode film provided on the piezoelectric film, the second electrode film being made of palladium (Pd), platinum (Pt), rhodium (Rh), gold (Au), ruthenium (Ru), iridium (Ir), molybdenum (Mo), titanium (Ti), or tantalum (Ta), and

a second stress control film provided on the second electrode film, the second stress control film being made of inorganic materials selected from Pd, Co, Ni, Au, Cu, Ag, and Ti; alloys composed of elements selected from Ni, Fe, Co, Cr, Al, and Mg; or inorganic oxides selected from Nb2O 5 , Y 2 O 3 , TiO 2 , MgO, BaO, CaO, and SrO,

wherein the second stress control film is in direct contact with the second electrode film, and

wherein a linear expansion coefficient of the second stress control film is larger than linear expansion coefficients of the second electrode film and the piezoelectric film.

2. The piezoelectric device according to claim 1 , wherein the second stress control film is an inorganic oxide.

3. The piezoelectric device according to claim 1 , wherein a top surface of the second stress control film and a bottom surface of the first electrode film are exposed.

4. The piezoelectric device according to claim 1 , further comprising:

a first stress control film provided on a bottom surface of the first electrode film,

wherein the first stress control film is in direct contact with the first electrode film, and

wherein a linear expansion coefficient of the first stress control film is larger than linear expansion coefficients of the first electrode film and the piezoelectric film.

5. The piezoelectric device according to claim 4 , wherein the first stress control film is an inorganic oxide.

6. The piezoelectric device according to claim 4 , wherein a top surface of the second stress control film and a bottom surface of the first stress control film are exposed.

7. The piezoelectric device according to claim 1 , wherein:

the piezoelectric film is made of KNN, PZT or BT,

the second electrode film is made of Pt or Mo and

the second stress control film is made of Pd, Co, Ni, SrO or MgO.

8. The piezoelectric device according to claim 7 , wherein:

the piezoelectric film is made of KNN,