Wavelength converting material

1. A wavelength converting material comprising a phosphate compound having a chemical formula of AB 1-m-n PO 4 :M m, N n , wherein A comprises an alkali metal element, B comprises an alkaline earth metal element, M is a sensitizer and at least one element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, and Lu, and N is an acceptor and comprising a Yb element, the wavelength converting material is configured to emit a light with a peak wavelength ranging from 960 to 1040 nm, and wherein 0<m<0.3 and 0<n<0.3.

2. The wavelength converting material according to claim 1 , wherein A is at least one element selected from the group consisting of Li, Na, K, Rb and Cs, B is at least one element selected from the group consisting of Mg, Ca, Sr, and Ba.

3. The wavelength converting material according to claim 1 , wherein the wavelength converting material is capable of being excited by UV or blue light.

4. The wavelength converting material according to claim 3 , wherein the sensitizer can absorb the energy of UV or blue light via 4f-5d transition.

5. The wavelength converting material according to claim 4 , wherein the energy absorbed by the sensitizer can be transferred to the acceptor.

6. The wavelength converting material according to claim 1 , wherein the wavelength converting material is capable of being excited by a first light having a peak wavelength between 250 nm and 450 nm.

7. A method of synthesizing the wavelength converting material according to claim 1 , comprising the steps of:

providing a mixture of precursors containing phosphate of A, carbonate of B, oxide of M and oxide of N; and

sintering the mixture in a furnace under a condition of a temperature between 1000° C. and 1500° C., a firing time between 1 hour and 8 hours, and/or an atmosphere containing hydrogen gas.

8. An optoelectronic apparatus, comprising:

a light-emitting device capable of radiating a first light with a dominant wavelength; and

the wavelength converting material according to claim 1 , positioned on the light-emitting device.

9. The optoelectronic apparatus according to claim 8 , wherein A is at least one element selected from the group consisting of Li, Na, K, Rb and Cs, B is at least one element selected from the group consisting of Mg, Ca, Sr, and Ba.

10. The optoelectronic apparatus according to claim 8 , wherein the wavelength converting material is capable of being excited by the first light having a first dominant wavelength between 250 nm and 450 nm.

11. The optoelectronic apparatus according to claim 8 , wherein the light-emitting device comprises a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer formed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer.

12. The optoelectronic apparatus according to claim 8 , further comprising:

a circuit board comprising a circuit thereon, where the light-emitting device is formed thereon; and

a transparent encapsulating material formed on the circuit board and covering the light- emitting device, wherein the wavelength converting material is distributed in the transparent encapsulating material.

13. An optoelectronic apparatus, comprising:

the wavelength converting material according to claim 1 , wherein the wavelength converting material is capable of being excited by a first light to emit a second light; and

an optoelectronic device with the wavelength converting material formed thereon absorbing the second light and converting photon energy of the second light into electrical energy.

14. The optoelectronic apparatus according to claim 13 , wherein A is at least one element selected from the group consisting of Li, Na, K, Rb and Cs, B is at least one element selected from the group consisting of Mg, Ca, Sr, and Ba.

15. The optoelectronic apparatus according to claim 13 , wherein the first light is UV or blue light.

16. The optoelectronic apparatus according to claim 13 , wherein the second light is near infrared light.

17. The optoelectronic apparatus according to claim 13 , wherein the optoelectronic device comprises solar cell.

18. The wavelength converting material according to claim 1 , wherein the light has a peak wavelength ranging between 960 nm and 1000 nm.

19. The wavelength converting material according to claim 6 , wherein the light and the first light have a peak wavelength difference of greater than 500 nm.