Thin film transistor and method for preparing the same
The present invention relates to a thin film transistor and a method of manufacturing the same. More particularly, the present invention relates to a thin film transistor that includes a zinc oxide material including Si as a channel material of a semiconductor layer, and a method of manufacturing the same.
1. A thin film transistor comprising a substrate; a gate electrode; an insulating layer; a semiconductor layer; a source electrode; and a drain electrode,
wherein the semiconductor layer comprises a zinc oxide semiconductor channel material comprising Si,
wherein the semiconductor layer is doped with nitrogen through sequentially being subjected to a plasma nitrification process and then an oxygen heat treatment process after the semiconductor layer is formed, and
wherein the zinc oxide semiconductor channel material comprising Si is a material that comprises ZnO, ZnO:Al, ZnO:Ga, ZnO:In, or a complex oxide thereof and Si in an amount of more than 0 to 30 mole % or less.
2. The thin film transistor as set forth in claim 1 , wherein the semiconductor layer comprises a zinc oxide material comprising Si used alone or a channel material that comprises a material containing the zinc oxide material comprising Si and a group 1 or 5 material of the periodic table.