Granted Patent B2

US 8,460,992 · App. 13/567,294 · Granted Jun 11, 2013

Abstract

Claims (19)

1. A method of manufacturing a semiconductor device comprising

a first transistor formed on a first device region surrounded by a first area of a substrate, and

a second transistor formed on a second device region surrounded by a second area of the substrate, comprising:

forming

a first insulator formed in the first area of the substrate and

a second insulator formed in the second areas of the substrate;

forming an etching preventing film extending over

the first device region surrounded by the first area and

the second device region surrounded by the second area;

removing the etching preventing film extending over the first device region and the first area

while the second device region and the second area are covered by the etching preventing film;

forming a first gate insulating film extending over the first device region while the second device region and the second area are covered by the etching preventing film;

removing the etching preventing film over the second device region and the second area;

forming a second gate insulating film over the second device region; and

forming a first gate electrode on the first gate insulating film and

forming a second gate electrode on the second gate insulating film.

2. The method according to claim 1 , wherein

the first gate insulating film has a first thickness, and

the second gate insulating film has a second thickness less than the first thickness of the first gate insulating film.

Assignments (9)