Semiconductor laser gain device with mode filter
View Patent ↗A semiconductor gain device comprising a substrate; an optical waveguide layer extending from a first end of the substrate to a second end of the substrate opposite to the first end, the optical waveguide layer including an active layer formed on the upper surface; a reflective mirror provided at one end of the optical waveguide layer, and an exit aperture on the other end of the optical waveguide layer for emitting optical energy; wherein at least a portion of the optical waveguide layer is curved on the surface of the substrate from the first end to the second end with a radius of curvature of less than 4 mm.
1. A semiconductor gain device comprising of:
a substrate defining an upper surface;
an optical waveguide layer extending from a first end of the substrate to a second end of the substrate opposite to the first end, the optical waveguide layer including an active layer formed on the upper surface;
a reflective mirror provided at one end of the optical waveguide layer; and
an exit aperture on the other end of the optical waveguide layer for emitting optical energy;
wherein at least a portion of the optical waveguide layer is curved on the surface of the substrate with a radius of curvature of between 3.5 mm and 4 mm.
2. The device as defined in claim 1 , wherein the distance from the first end to the second end is 2.0 mm or less.
3. The device as defined in claim 1 , wherein the optical waveguide layer includes a first portion with zero curvature and a second portion with a radius of curvature of less than 4 mm.
4. The device as defined in claim 1 , wherein the optical waveguide layer includes a first portion with zero curvature, a second portion adjacent to the first portion with an increasing radius of curvature, and a third portion adjacent to the second portion with a radius of curvature of less than 4 mm.
5. The device as defined in claim 4 , wherein the optical waveguide layer includes a fourth portion adjacent to the third portion with a decreasing radius of curvature.
6. The device as defined in claim 4 , wherein the first portion of the optical waveguide layer is 0.4 mm or less in length.
7. The device as defined in claim 4 , wherein the third portion of the optical waveguide layer is at least 0.2 mm or more in length.
8. The device as defined in claim 4 , wherein the second portion of the optical waveguide layer is at least 0.2 mm or more in length.
9. The device as defined in claim 5 , wherein the fourth portion of the optical waveguide layer is at least 0.2 mm or more in length.
10. A semiconductor gain device comprising of:
a substrate defining an upper surface;
an optical waveguide layer extending from a first end of the substrate to a second end of the substrate opposite to the first end, the optical waveguide layer including an active layer formed on the upper surface;
a reflective mirror provided at one end of the optical waveguide layer; and
an exit aperture on the other end of the optical waveguide layer for emitting optical energy;
wherein the optical waveguide layer comprises a first portion adjacent to the reflective mirror with zero curvature, a second portion adjacent to the first portion with a radius of curvature that increases from zero to a predetermined value, and a third portion adjacent to the second portion with a constant radius of curvature equal to the predetermined value so that only single mode laser radiation is propagated through the exit aperture.
11. The device as defined in claim 10 , wherein at least a portion of the optical waveguide layer is curved on the upper surface of the substrate with a radius of curvature of less than 4 mm so that any multimode radiation in the waveguide leaks from the curved portion and is not propagated through the exit aperture.
12. The device as defined in claim 10 , wherein the distance from the first end to the second end is 2.0 mm or less, and the the third portion defines a radius of curvature of less than 4 mm.
13. The device as defined in claim 10 , wherein the predetermined value is less than 4 mm.
14. The device as defined in claim 10 , wherein the optical waveguide layer further includes a fourth portion adjacent to the third portion with an decreasing radius of curvature that decreases from the predetermined value to zero curvature.
15. The device as defined in claim 14 , wherein the first portion of the optical waveguide layer is 0.4 mm or less in length; the second portion of the optical waveguide layer is at least 0.2 mm or more in length; the third portion is at least 0.2 mm or more in length; and the fourth portion is at least 0.2 mm or more in length.
16. The device as defined in claim 10 , wherein the predetermined value is between 3.5 mm and 4.0 mm.
17. A semiconductor gain device comprising of:
a substrate defining an upper surface and extending from a first end to a second end; and
an optical waveguide layer having a width of 3 microns and including an active layer formed on the upper surface;
a reflective mirror provided at one end of the optical waveguide layer; and
an exit aperture on the other end of the optical waveguide layer for emitting optical energy;
wherein at least a portion of the optical waveguide layer is curved on the upper surface of the substrate with a radius of curvature of greater than 3.5 and less than 4 mm so that only single mode laser radiation is propagated through the exit aperture.
18. The device as defined in claim 17 , wherein the distance from the first end to the second end is 2.0 mm or less, and the optical waveguide layer includes a first portion adjacent to the reflective mirror with zero curvature, and a second portion adjacent to the first portion with a radius of curvature of less than 4 mm.
19. The device as defined in claim 17 , wherein the distance from the first end to the second end is 1.0 mm.
20. The device as defined in claim 17 , wherein the optical waveguide layer includes a portion with a radius of curvature of 3.8 mm.