DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE DISPLAY DEVICE
A display device and a method for manufacturing the same which can improve the reliability of TFTs and provide good contrast characteristics are provided. A display device according to the present invention includes a light-transmissive substrate; an impurity-doped layer provided in a part of the light-transmissive substrate; an insulating film provided on the impurity-doped layer and the light-transmissive substrate; a TFT circuit formed on the insulating film and including a plurality of TFTs; and a shutter array including a plurality of shutters drivable by the TFT circuit.
1 . A display device, comprising:
a light-transmissive substrate;
an impurity-doped layer provided in a part of the light-transmissive substrate;
an insulating film provided on the impurity-doped layer and the light-transmissive substrate;
a TFT circuit formed on the insulating film and including a plurality of TFTs; and
a shutter array including a plurality of shutters drivable by the TFT circuit.
2 . A display device according to claim 1 , wherein the impurity-doped layer contains an element among Cu, Mn, Cr, Fe, V, C, Al, Ti and Nb.
3 . A display device according to claim 1 , wherein the impurity-doped layer is provided in an area of a depth of 10 nm to 800 nm from a surface of the substrate.
4 . A display device according to claim 1 , wherein the impurity-doped layer has a light transmittance of 70% or less.
5 . A display device according to claim 1 , wherein the impurity-doped layer is provided by ion implantation.
6 . A display device according to claim 1 , further comprising:
a counter substrate which is joined with the light-transmissive substrate and has a plurality of openings; and
a backlight unit provided rear to the light-transmissive substrate and the counter substrate;
wherein light supplied from the backlight unit is transmitted through a part at which the openings of the counter substrate overlap parts of the light-transmissive substrate where the impurity-doped layer is not provided.
7 . A method for manufacturing a display device, comprising:
forming an impurity-doped layer in a part of a light-transmissive substrate;
forming an insulating film on the impurity-doped layer and the light-transmissive substrate; and
forming a TFT circuit including a plurality of TFTs and a plurality of shutters respectively connected to the plurality of TFTs on the insulating film.
8 . A method for manufacturing a display device according to claim 7 , wherein the impurity-doped layer is formed by ion implantation by use of an ion source containing an element among Cu, Mn, Cr, Fe, V, C, Al Ti and Nb.
9 . A method for manufacturing a display device according to claim 8 , wherein the impurity-doped layer is formed by ion implantation at an acceleration voltage is 10 keV to 200 keV and an ion dose of 10 14 cm −2 to 10 17 cm −2 .
10 . A method for manufacturing a display device according to claim 7 , wherein an amorphous silicon film is formed on the insulating film; a polycrystalline silicon film is formed by irradiating the amorphous silicon film with laser; and the TFT circuit is formed by use of the polycrystalline silicon film.