IP Library Granted Patent US 9,310,393
Granted Patent B2
US 9,310,393 · App. 13/569,493 · Granted Apr 12, 2016

Physical quantity sensor and electronic apparatus

Inventor: Mitsuhiro Yoda (Shiojiri, JP)
Assignee: Seiko Epson Corporation
G01P15/125G01P15/0802G01P2015/0814
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Quick Facts
Patent No.
US 9,310,393
App. No.
13/569,493
Granted
Apr 12, 2016
Kind
B2
Abstract

A physical quantity sensor includes a base substrate, a movable part located on the base substrate and provided on a principal surface of the base substrate, a movable electrode part provided in the movable part, and a fixed electrode part provided on the principal surface of the base substrate and located to be opposed to a movable electrode finger, and the fixed electrode part is connected to fixed electrode wiring provided at the principal surface side of the base substrate, the movable electrode part is connected to movable electrode wiring provided at the principal surface side of the base substrate, and a shield part is provided between the fixed electrode wiring and the movable electrode wiring.

Claims (41)

1. A physical quantity sensor comprising:

a substrate having first and second recesses in a principal surface;

a movable part supported on the substrate;

a movable electrode part provided in the movable part; and

a fixed electrode part provided on the principal surface of the substrate and located to be opposed to the movable electrode part,

wherein the fixed electrode part is connected to fixed electrode wiring provided on a first bottom surface of the first recess in the substrate, an end of the fixed electrode wiring is located at a first side of the principal surface, the fixed electrode wiring extends toward a center of the substrate, and a first depth of the first recess is larger than a first thickness of the fixed electrode wiring,

the movable electrode part is connected to movable electrode wiring provided on a second bottom surface of the second recess in the substrate, an end of the movable electrode wiring is located at the first side of the principal surface, the movable electrode wiring is located in a direction along an extended direction of the fixed electrode wiring at the first side of the principal surface, and a second depth of the second recess is larger than a second thickness of the movable electrode wiring, and

a first shield part is provided on the principal surface of the substrate at least between the fixed electrode wiring and the movable electrode wiring at the first side, and the first shield part does not overlap with the fixed electrode wiring and the movable electrode wiring in a plan view, wherein the substrate has first and second end recesses at the first side of the principal surface, and the first and second end recesses are continuously provided with the first and second recesses, respectively, the end of the fixed electrode wiring is located at the first end recess, and the end of the movable electrode wiring is located at the second end recess, and a third depth of the first end recess is larger than the first depth of the first recess, and a fourth depth of the second end recess is larger than the second depth of the second recess.

2. The physical quantity sensor according to claim 1 , wherein the fixed electrode part has a first fixed electrode part located at one side of the movable electrode part and a second fixed electrode part located at the other side,

the fixed electrode wiring includes a first wire connected to the first fixed electrode part and a second wire connected to the second fixed electrode part, and

a second shield part is provided in at least one part between the first wire and the second wire.

3. The physical quantity sensor according to claim 1 , wherein an insulating material is used for the substrate, and

a semiconductor material is used for the movable part, the movable electrode part, and the fixed electrode part.

4. The physical quantity sensor according to claim 1 , wherein the movable part, the movable electrode part, the fixed electrode part, and the first shield part are formed by a same material.

5. An electronic apparatus comprising the physical quantity sensor according to claim 1 .

6. The physical quantity sensor according to claim 1 , wherein

a third thickness of the first shield part is larger than the first thickness of the fixed electrode wiring.

7. The physical quantity sensor according to claim 1 , wherein

a third thickness of the first shield part is larger than the second thickness of the movable electrode wiring.

8. The physical quantity sensor according to claim 7 , wherein

the third thickness of the first shield part is larger than the first thickness of the fixed electrode wiring.

9. A physical quantity sensor comprising:

a substrate having first through third recesses in a principal surface, the principal surface having a first side and a second side opposite to the first side;

a movable part supported on the substrate;

a movable electrode part provided in the movable part; and

a fixed electrode part provided on the principal surface of the substrate and located to be opposed to the movable electrode part, wherein

the fixed electrode part is connected to first and second fixed electrode wirings respectively provided on a first bottom surface of the first recess and a second bottom surface of the second recess in the substrate, ends of the first and second fixed electrode wirings are located at the first side of the principal surface, the first and second fixed electrode wirings extend toward the second side of the principal surface via a center of the substrate, a first depth of the first recess is larger than a first thickness of the first fixed electrode wiring, and a second depth of the second recess is larger than a second thickness of the second fixed electrode wiring,

the movable electrode part is connected to movable electrode wiring provided on a third bottom surface of the third recess in the substrate, an end of the movable electrode wiring is located at the first side of the principal surface, the movable electrode wiring is located in a direction along an extended direction of the first and second fixed electrode wirings at the first side of the principal surface, a third depth of the third recess is larger than a third thickness of the movable electrode wiring, and

a first shield part is provided on the principal surface of the substrate between the second fixed electrode wiring and the movable electrode wiring at the first side, the first shield part does not overlap with the fixed electrode wiring and the movable electrode wiring in a plan view, and the first and second fixed electrode wirings sandwich the first shield part in the second side of the principal surface, wherein the substrate has first and third end recesses at the first side of the principal surface, and the first and third end recesses are continuously provided with the first and third recesses, respectively, the end of the fixed electrode wiring is located at the first end recess, and the end of the movable electrode wiring is located at the third end recess, and a fourth depth of the first end recess is larger than the first depth of the first recess, and a fifth depth of the third end recess is larger than the third depth of the third recess.

10. The physical quantity sensor according to claim 9 , wherein

an insulating material is used for the substrate, and

a semiconductor material is used for the movable part, the movable electrode part, and the fixed electrode part.

11. The physical quantity sensor according to claim 9 , wherein

the movable part, the movable electrode part, the fixed electrode part, and the first shield part are formed by a same material.

12. An electronic apparatus comprising the physical quantity sensor according to claim 9 .

13. The physical quantity sensor according to claim 11 , wherein

a layer thickness of the first shield part is larger than the first and second thicknesses of the first and second fixed electrode wirings.

14. The physical quantity sensor according to claim 9 , wherein

a layer thickness of the first shield part is larger than the third thickness of the movable electrode wiring.

15. The physical quantity sensor according to claim 14 , wherein

the layer thickness of the first shield part is larger than the first and second thicknesses of the first and second fixed electrode wirings.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 1, 2024
From: SEIKO EPSON CORPORATION
To: CRYSTAL LEAP ZRT
Reel/Frame 066162/0434 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 8, 2012
From: YODA, MITSUHIRO
To: SEIKO EPSON CORPORATION
Reel/Frame 028748/0471 →
Priority Claims (1)
JP 2011-178253 · Aug 17, 2011 · national
Continuity (1)
Related Publication 20130042685A1 · Feb 21, 2013