Light-emitting semiconductor device and package thereof
View Patent ↗The present application discloses a light-emitting semiconductor device including a transparent layer having an upper surface, a lower surface, and a sidewall; a wavelength conversion structure arranged on the upper surface; an epitaxial structure arranged on the lower surface and having a side surface devoid of the transparent layer and the wavelength conversion structure; and a reflective wall arranged to cover the sidewall.
1. A light-emitting device, comprising:
a transparent layer having an upper surface, a lower surface, and a sidewall;
a wavelength conversion structure arranged on the upper surface;
an epitaxial structure arranged on the lower surface and having a side surface devoid of the transparent layer and the wavelength conversion structure; and
a reflective wall arranged to cover the sidewall.
2. The light-emitting device of claim 1 , further comprising an electrode contacting with the transparent layer.
3. The light-emitting device of claim 1 , further comprising an electrode contacting with the reflective wall.
4. The light-emitting device of claim 1 , wherein the reflective wall is configured to surround the transparent layer.
5. The light-emitting device of claim 1 , wherein the reflective wall is configured to cover the wavelength conversion structure.
6. The light-emitting device of claim 1 , wherein the reflective wall is configured to cover the epitaxial structure.
7. The light-emitting device of claim 1 , wherein the transparent layer has a thickness of at least 0.3 mm.
8. A light-emitting device, comprising:
a wavelength conversion structure having a side surface;
an epitaxial structure under the wavelength conversion structure, and having a bottom surface and a top surface with a corner substantially devoid of the wavelength conversion structure; and
a first electrode arranged in the corner and having adjacent side surfaces devoid of the wavelength conversion structure.
9. The light-emitting device of claim 8 , further comprising a second electrode arranged on the bottom surface.
10. The light-emitting device of claim 8 , further comprising a transparent layer between the wavelength conversion structure and the epitaxial structure.
11. The light-emitting device of claim 10 , further comprising a reflective wall covering the side surface and the transparent layer.
12. The light-emitting device of claim 8 , further comprising a reflective wall covering the side surface.
13. The light-emitting device of claim 8 , wherein the wavelength conversion structure is distant from the epitaxial structure by a distance of at least 0.3 mm.
14. A light-emitting device, comprising:
a wavelength conversion structure having a top area;
a space having a reflective boundary, and a first cross section that is substantially parallel to the wavelength conversion structure and has a first area greater than the top area; and
a semiconductor luminescence device arranged in the space to be distant from the top area and close to the first cross section.
15. The light-emitting device of claim 14 , further comprising a wavelength selection film arranged in the space, and between the wavelength conversion structure and the semiconductor luminescence device.
16. The light-emitting device of claim 14 , further comprising a transparent layer in the space.
17. The light-emitting device of claim 16 , wherein the reflective boundary surrounds the transparent layer.
18. The light-emitting device of claim 16 , wherein the transparent layer has a height greater than the semiconductor luminescence device.
19. The light-emitting device of claim 14 , wherein the wavelength conversion structure is disposed over the space.
20. The light-emitting device of claim 14 , wherein the space has a second cross section arranged between the first cross section and the wavelength conversion structure, and having a second area between the top area and the first area.