Opto-electronic device
The present invention provides a current blocking structure for electronic devices, preferably optoelectronic devices. The current blocking structure comprises a semiconductor material arrangement comprising an n-type ruthenium doped indium phosphide (Ru—InP) layer and a first p-type semiconductor material layer wherein the n-type Ru—InP layer is less than 0.6 μm thick. The semiconductor material arrangement and p-type semiconductor material layer form a current blocking p-n junction. The current blocking structure may further comprise other n-type layers and/or multiple n-type Ru—InP layers and/or intrinsic/undoped layers wherein the n-type Ru—InP layers may be thicker than 0.6 μm.
1. An electronic device comprising a current blocking structure; the current blocking structure comprising:
a) a first p-type semiconductor material layer; and,
b) a semiconductor material arrangement comprising an n-type ruthenium doped indium phosphide (Ru—InP) layer;
the semiconductor material arrangement and p-type semiconductor material layer forming a first p-n junction, wherein the n-typed Ru—InP layer is directly disposed over the first p-type semiconductor material layer;
wherein the n-type ruthenium doped indium phosphide layer comprises a thickness less than about 0.6 μm.
2. The device as claimed in claim 1 wherein the semiconductor material arrangement is a layer stack comprising the n-type ruthenium doped indium phosphide layer and one or more further n-type InP materials.
3. The device as claimed in claim 1 wherein the current blocking structure further comprises an intrinsic semiconductor material.
4. The device as claimed in claim 1 further comprising a second p-n junction disposed to a side of the first p-n junction: the second p-n junction comprising an n-type semiconductor material layer and a p-type semiconductor material layer.
5. The device as claimed in claim 4 wherein the n-type ruthenium doped indium phosphide layer and first p-type semiconductor material layer are positioned in a substantially opposite orientation to the n and p-type semiconductor material layers of the second p-n junction.
6. The device as claimed in claim 5 wherein the second p-n junction is bordered by the intrinsic semiconductor material.
7. An electronic device comprising a current blocking structure; the current blocking structure comprising:
a) a first p-type semiconductor material layer;
b) a semiconductor material arrangement comprising an n-type ruthenium doped indium phosphide (Ru—InP) layer;
the semiconductor material arrangement and p-type semiconductor material layer forming a first p-n junction;
wherein the semiconductor material arrangement is a layer stack comprising the n-type ruthenium doped indium phosphide layer and one or more further n-type InP materials;
and a second p-n junction disposed to a side of the first p-n junction: the second p-n junction comprising an n-type semiconductor material layer and a p-type semiconductor material layer.
8. The device as claimed in claim 7 wherein the n-type ruthenium doped indium phosphide layer and first p-type semiconductor material layer are positioned in a substantially opposite orientation to the n and p-type semiconductor material layers of the second p-n junction.
9. An electronic device comprising a current blocking structure; the current blocking structure comprising:
a) a first p-type semiconductor material layer;
b) a semiconductor material arrangement comprising an n-type ruthenium doped indium phosphide (Ru—InP) layer;
the semiconductor material arrangement and p-type semiconductor material layer forming a first p-n junction;
wherein the current blocking structure further comprises an intrinsic semiconductor material; and
a second p-n junction disposed to a side of the first p-n junction: the second p-n junction comprising an n-type semiconductor material layer and a p-type semiconductor material layer.
10. The device as claimed in claim 9 wherein the semiconductor material arrangement is a layer stack comprising the n-type ruthenium doped indium phosphide layer and one or more further n-type InP materials.
11. The device as claimed in claim 9 wherein the n-type ruthenium doped indium phosphide layer and first p-type semiconductor material layer are positioned in a substantially opposite orientation to the n and p-type semiconductor material layers of the second p-n junction.
12. The device as claimed in claim 11 wherein the second p-n junction is bordered by the intrinsic semiconductor material.
13. The device as claimed in claim 9 wherein the ruthenium doped indium phosphide layer comprises a thickness between about 0.1 μm and about 0.4 μm.
14. The device as claimed in claim 9 wherein the current blocking structure comprises a second p-type semiconductor material.