Semiconductor device and method of manufacturing the same
A semiconductor device including conductive lines configured to include first lines extending generally in parallel in a first direction and second lines extending generally in parallel in a second direction to intersect the first direction from the respective ends of the first lines and each second line having a width wider than the first line, and dummy patterns formed between the second lines.
1. A semiconductor device, comprising:
conductive lines configured to include first lines extending generally in parallel in a first direction and second lines extending generally in parallel in a second direction to intersect the first direction from respective ends of the first lines;
dummy patterns formed generally between the second lines; and
a contact plug
wherein each second line has a width wider than the first line, such that the contact plug is aligned on one of the second lines.
2. The semiconductor device of claim 1 , wherein the width of the second line is at least twice the width of the first line.
3. The semiconductor device of claim 1 , wherein the second lines comprise first patterns extended in the second direction from the ends of the first lines and second patterns formed on sidewalls of the first patterns.
4. The semiconductor device of claim 3 , wherein the first pattern and the second pattern have generally the same width.
5. The semiconductor device of claim 3 , wherein the first pattern and the second pattern have an identical width.
6. The semiconductor device of claim 1 , wherein the dummy patterns are extended generally in the second direction generally between the second lines.
7. The semiconductor device of claim 1 , wherein the dummy patterns are irregularly disposed between the second lines.
8. The semiconductor device of claim 1 , further comprising a line group including four second lines; and the dummy patterns being disposed outside the line group, before a first outer line of the line group and after a last outer line of the line group.
9. The semiconductor device of claim 1 , wherein:
the first lines are arranged at first intervals, and
the second lines are arranged at second intervals.
10. The semiconductor device of claim 8 , wherein:
the first intervals are arranged at identical intervals, and
the second intervals are arranged at irregular intervals.
11. The semiconductor device of claim 1 , wherein:
an interval between the second lines is generally the same as an interval between the first lines, and
an interval between the second lines in areas where the dummy patterns are disposed is wider than the interval between the first lines.
12. The semiconductor device of claim 1 , further comprising:
a drain select line and a source select line each having a wider width than each of the conductive lines,
wherein the first lines of the conductive lines are disposed between the drain select line and the source select line.
13. The semiconductor device of claim 1 , wherein the dummy patterns are not disposed between the first lines.