Multilayer Thin-Film Back Contact System For Flexible Photoboltaic Devices On Polymer Substrates
A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.
1 . A polymer substrate and back contact structure for a photovoltaic element, comprising:
a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side;
a layer of dielectric formed at the back side of the polymer substrate; and
a metal structure formed at the device side of the polymer substrate.
2 . The structure of claim 1 , wherein the photovoltaic element comprises a CIGS structure.
3 . The structure of claim 1 , wherein the dielectric comprises at least one of SiO 2 , Al 2 O 3 , and silicone resin.
4 . The structure of claim 3 , further comprising a thin adhesion layer disposed between the layer of dielectric and the back side of the polymer substrate.
5 . The structure of claim 4 , wherein the adhesion layer comprises at least one of molybdenum, aluminum, chromium, titanium, titanium nitride (TiN), a metal oxide, and a metal nitride.
6 . The structure of claim 1 , wherein the metal structure comprises a first metal layer, the first metal layer comprising at least one of aluminum, brass, bronze and copper.
7 . The structure of claim 6 , wherein the metal structure further comprises a layer of molybdenum formed over the first metal layer.
8 . The structure of claim 6 , wherein the metal structure further comprises a thin adhesion layer disposed between the first metal layer and the device side of the polymer substrate.
9 . The structure of claim 8 , wherein the thin adhesion layer comprises at least one of molybdenum, aluminum, chromium, titanium, titanium nitride (TiN), a metal oxide, and a metal nitride.
10 . The structure of claim 1 , wherein the metal structure further comprises a thin adhesion layer in contact with the device side of the polymer layer.
11 . The structure of claim 10 , wherein the thin adhesion layer comprises at least one of molybdenum, aluminum, chromium, titanium, titanium nitride (TiN), a metal oxide, and a metal nitride.
12 . A photovoltaic element, comprising:
a CIGS photovoltaic structure;
a polymer substrate having a device side at which the CIGS photovoltaic structure can be located and a back side opposite the device side;
a layer of dielectric formed at the back side of the polymer substrate; and
a metal structure formed at the device side of the polymer substrate between the polymer substrate and the CIGS photovoltaic structure.
13 . The photovoltaic element of claim 12 , wherein the dielectric comprises at least one of SiO 2 , Al 2 O 3 , and silicone resin.
14 . The photovoltaic element of claim 12 , wherein the dielectric comprises an oxynitride formed from one of aluminum and silicon.
15 . The photovoltaic element of claim 12 , further comprising a thin adhesion layer disposed between the layer of dielectric and the back side of the polymer substrate.
16 . The photovoltaic element of claim 15 , wherein the adhesion layer comprises at least one of molybdenum, aluminum, chromium, titanium, titanium nitride (TiN), a metal oxide, and a metal nitride.
17 . The photovoltaic element of claim 12 , wherein the metal structure comprises a first metal layer, the first metal layer comprising at least one of aluminum, brass, bronze and copper.
18 . The photovoltaic element of claim 17 , wherein the metal structure further comprises a layer of molybdenum formed over the first metal layer.
19 . The photovoltaic element of claim 17 , wherein the metal structure further comprises a thin adhesion layer disposed between the first metal layer and the device side of the polymer substrate.
20 . The photovoltaic element of claim 19 , wherein the thin adhesion layer comprises at least one of molybdenum, aluminum, chromium, titanium, titanium nitride (TiN), a metal oxide, and a metal nitride.
21 . The photovoltaic element of claim 12 , wherein the metal structure further comprises a thin adhesion layer in contact with the device side of the polymer layer.
22 . The photovoltaic element of claim 21 , wherein the thin adhesion layer comprises at least one of molybdenum, aluminum, chromium, titanium nitride (TiN), a metal oxide, and a metal nitride.