Electric resistance element suitable for light-emitting diode, laser diodes, or photodetectors
View Patent ↗An electric resistance element comprising: a base body, which is formed with a semiconductor material; a first contact element, which is electrically conductively connected to the base body; and a second contact element, which is electrically conductively connected to the base body. The base body has a first main surface into which a cutout is introduced. The first contact element is electrically conductively connected to the base body at least in places in the cutout. The base body has a second main surface, which is arranged in a manner lying opposite the first main surface. The second contact element is electrically conductively connected to the base body at least in places at the second main surface.
1. An electric resistance element comprising:
a base body, which is formed with a semiconductor material;
a first contact element, which is electrically conductively connected to the base body; and
a second contact element, which is electrically conductively connected to the base body,
wherein the base body has a first main surface into which a cutout is introduced,
wherein the first contact element is electrically conductively connected to the base body at least in places in the cutout,
wherein the base body has a second main surface, which is arranged in a manner lying opposite the first main surface, and
wherein the second contact element is electrically conductively connected to the base body at least in places at the second main surface.
2. The electric resistance element according to claim 1 , wherein an electrically insulating passivation element is arranged between the first main surface and the first contact element.
3. The electric resistance element according to claim 1 , wherein the first contact element and the base body are electrically conductively connected to one another only in the region of the cutout.
4. The electric resistance element according to claim 1 ,
wherein the cutout has at least one side surface and at least one bottom surface;
wherein the at least one side surface and the at least one bottom surface delimit the cutout toward the base body, and
wherein the at least one side surface and the at least one bottom surface are completely in direct contact with the first contact element.
5. The electric resistance element according to claim 1 , wherein the cutout is embodied in the manner of a pyramid whose vertex faces the second main surface.
6. The electric resistance element according to claim 1 , wherein the cutout has traces of an etching process at its at least one side surface and its at least one bottom surface.
7. The electric resistance element according to claim 1 having a positive temperature coefficient.
8. The electric resistance element according to claim 1 , wherein the base body consists of a doped silicon, and wherein the dopant concentration is at least 10 15 cm −3 and at most 10 17 cm −3 .
9. The electric resistance element according to claim 1 , wherein the base body has a thickness of at least 100 μm.
10. The electric resistance element according to claim 1 , wherein the first main surface and/or the second main surface have/has a basic area of at most 1 mm 2 .
11. An illumination device comprising:
a first arrangement of light-emitting diodes, which comprises at least one light-emitting diode of a first type;
a second arrangement of light-emitting diodes, which comprises at least one light-emitting diode of a second type; and
a resistance element according to claim 1 ,
wherein the light-emitting diodes of a first type have a different temperature dependence than the light-emitting diodes of a second type;
wherein the resistance element and the second arrangement of light-emitting diodes form a series circuit; and
wherein the series circuit and the first arrangement of light-emitting diodes form a parallel circuit.