Piezoelectric devices and methods for their preparation and use
View Patent ↗Methods for fabricating a piezoelectric device are provided. The methods can include providing a substrate and forming a nanocrystalline diamond layer on a first surface of the substrate. The methods can also include depositing a piezoelectric layer on a first surface of the nanocrystalline diamond layer.
1. A piezoelectric device, comprising:
a substrate;
a nanocrystalline diamond (NCD) layer disposed on a first surface of the substrate; and
a perovskite piezoelectric layer deposited directly on a first surface of the nanocrystalline diamond layer,
wherein the perovskite piezoelectric layer is selected from the group consisting of lead lanthanum zirconate titanate (PLZT) and lead zirconate titanate (PZT), and
wherein the perovskite piezoelectric layer is annealed at a temperature of 525° C. to 600° C. for 30 minutes to 2 hours in an atmosphere comprising 0.4 mbar to 0.6 mbar oxygen gas.
2. The piezoelectric device of claim 1 , wherein the substrate comprises silicon.
3. The piezoelectric device of claim 1 , wherein the device is a surface acoustic wave (SAW) device, or a micro-electro-mechanical-system (MEMS) device.
4. The piezoelectric device of claim 1 , wherein the perovskite piezoelectric layer is deposited on the nanocrystalline diamond (NCD) layer using a pulsed laser deposition (PLD) technique.
5. The piezoelectric device of claim 2 , wherein the substrate has a thickness of 100 microns to 1000 microns.
6. The piezoelectric device of claim 1 , wherein the perovskite piezoelectric layer has a thickness of 100 nm to 800 nm.
7. The piezoelectric device of claim 1 , wherein the nanocrystalline diamond (NCD) layer has a thickness of 0.5 microns to 10 microns.
8. A piezoelectric device, comprising:
a substrate;
a nanocrystalline diamond (NCD) layer disposed on a first surface of the substrate; and
a perovskite piezoelectric layer deposited directly on a first surface of the nanocrystalline diamond layer,
wherein the perovskite piezoelectric layer consists of lead lanthanum zirconate titanate (PLZT), and
wherein the perovskite piezoelectric layer is annealed at a temperature of 525° C. to 600° C. for 30 minutes to 2 hours in an atmosphere comprising 0.4 mbar to 0.6 mbar oxygen gas.
9. The piezoelectric device of claim 1 , wherein the perovskite piezoelectric layer is a perovskite piezoelectric layer deposited by pulsed laser deposition at a deposition temperature of 525° C. to 600° C.