IP Library Granted Patent US 9,123,856
Granted Patent B2
US 9,123,856 · App. 13/583,993 · Granted Sep 1, 2015

Affecting the thermoelectric figure of merit (ZT) and the power factor by high pressure, high temperature sintering

Inventors: Abds-Sami Malik (Westerville, OH); Francis J. DiSalvo (Ithaca, NY); Yongkwan Dong (Tampa, FL)
Assignee: Diamond Innovations, Inc.
H01L35/16B22F3/14C01B19/002C01B19/007C01G19/00C01G19/006C01G21/006C01G21/21C22C1/04H01L35/34B22F2998/10C01P2002/72C01P2004/03C01P2004/04C01P2006/40
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Quick Facts
Patent No.
US 9,123,856
App. No.
13/583,993
Granted
Sep 1, 2015
Kind
B2
Abstract

A method for increasing the ZT of a material, involves creating a reaction cell including a material in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the material, and recovering the material with an increased ZT.

Claims (13)

1. A method of increasing the ZT of a thermoelectric material, comprising:

exposing a thermoelectric material to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the thermoelectric material, wherein the elevated pressure ranges from about 1 GPa to 20 GPa and the elevated temperature ranges from about 500° C. to about 2500° C.; and

recovering the thermoelectric material with an increased ZT when measured at the pressure and temperature of use,

wherein, when said consolidated blank of thermoelectric material is exposed to a temperature of use, an increased ZT is maintained for an extended period of time as evaluated at 10 days of exposure to the temperature of use, and

wherein the thermoelectric material comprises GeTe—AgSbTe 2 alloys.

2. The method of claim 1 , wherein the elevated pressure ranges from about 2 GPa to about 10 GPa.

3. The method of claim 1 , wherein the elevated pressure ranges from about 3.5 GPa to about 4.5 GPa.

4. The method of claim 1 , wherein the elevated pressure is about 4 GPa.

5. The method of claim 1 , wherein the elevated temperature ranges from about a third of the melting temperature to about 500° C. above the melting point of the thermoelectric material at process pressures.

6. The method of claim 1 , wherein the elevated temperature ranges from a sintering temperature of the thermoelectric material to about a melting point of the thermoelectric material at process pressures.

7. The method of claim 1 , wherein the time sufficient to increase the ZT is from about 30 seconds to about 24 hours.

8. The method of claim 6 , wherein the time sufficient to increase the ZT is from about 5minutes to about 30 minutes.

9. The method of claim 1 , wherein the composition of the thermoelectric material further comprises dopants.

Assignments (8)
2L PATENT SECURITY RELEASE AGREEMENT Recorded Aug 31, 2021
From: UBS AG, STAMFORD BRANCH
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 057650/0602 →
1L PATENT SECURITY RELEASE AGREEMENT Recorded Aug 31, 2021
From: UBS AG, STAMFORD BRANCH
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 057651/0040 →
SECURITY INTEREST Recorded Aug 31, 2021
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 057388/0971 →
SECOND LIEN PATENT SECURITY AGREEMENT Recorded Sep 4, 2019
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 050272/0472 →
FIRST LIEN PATENT SECURITY AGREEMENT Recorded Sep 4, 2019
From: DIAMOND INNOVATIONS, INC.
To: UBS AG, STAMFORD BRANCH
Reel/Frame 050272/0415 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 15, 2017
From: DISALVO, FRANCIS J.
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 044406/0310 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 5, 2017
From: DONG, YONGKWAN
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 044294/0094 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 12, 2012
From: MALIK, ABDS-SAMI
To: DIAMOND INNOVATIONS, INC.
Reel/Frame 028940/0369 →
Continuity (2)
Continuation In Part 13376428
Related Publication 20130001480A1 · Jan 3, 2013