IP Library Granted Patent US 8,411,233
Granted Patent B2
US 8,411,233 · App. 13/586,102 · Granted Apr 2, 2013

Method for manufacturing a color filter substrate

Inventors: Sounosuke Takahashi (Kanagawa, JP); Teruaki Suzuki (Kanagawa, JP); Shinichi Nishida (Kanagawa, JP); Yoshikazu Sakaguchi (Kanagawa, JP); Yoichi Sasaki (Kanagawa, JP)
Assignee: NEC LCD Technologies, Ltd.
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Quick Facts
Patent No.
US 8,411,233
App. No.
13/586,102
Granted
Apr 2, 2013
Kind
B2
Abstract

A light shield member in a LCD unit includes a first shield section that includes a pile of two color filter patterns and separates each effective opening of pixel from an effective opening of the adjacent pixel, and a second shield section that includes a pile of three color filter patterns and shields a TFT area including a TFT and the vicinity thereof.

Claims (18)

1. A method for manufacturing a color filter substrate for use in combination with a thin-film-transistor substrate that includes an array of pixels and associated thin film transistors disposed in a vicinity of intersections of gate lines and signal lines, said pixels each including an effective opening area and a shielded area encircling said effective opening area, said method comprising in a sequential order:

forming a plurality of first color filter layers with a spacing formed in an extending direction of said gate lines between each of the plurality of first color filter layers, the color filter layers including a first stripe portion extending in a direction parallel to said signal lines, and a pair of extension portions extending from said first stripe portion in opposite directions parallel to said gate lines;

forming a plurality of second color filter layers including a second stripe portion extending in a direction parallel to said signal lines, and a pair of second extension portions extending from said second stripe portion in opposite directions parallel to said gate lines adjacent to each said first color filter layer so that said second stripe portion is in parallel to said first stripe portion, and said second stripe portion and said first stripe portion are partially stacked on each other; and

forming a plurality of third color filter layers including a third stripe portion extending in a direction parallel to said signal lines, and a pair of third extension portions extending from said stripe portion in opposite directions parallel to said gate lines adjacent said first color filter layer and said second color filter layer so that said third stripe portion is in parallel to said first and second stripe portions, and said third stripe portion is partially stacked on said first and second stripe portions, wherein

said first through third color filter layers have different colors,

a first color-stacked light shield section including color filter layers with two different colors stacked on each other in a portion of an area corresponding to said light shielded area on said color filter substrate is formed due to said first through third stripe portions adjacent to each other that are stacked on each other, and

a second color-stacked light shield section including color filter layers with three different colors stacked on each other in a portion of an area corresponding to said light shielded area on said color filter substrate is formed due to said first through third color filter layers that are formed such that said pair of first through third extension portions are extended on a line parallel to an extending direction of said gate lines.

2. The method according to claim 1 , wherein said first color filter layer is a blue-color filter layer, said second color filter layer is a red-color filter layer, and the third color filter layer is a green-color filter layer, or said first color filter layer is a red-color filter layer, said second color filter layer is a blue-color filter layer, and said third color filter layer is a green-color filter layer.

3. The method according to claim 1 , wherein said second color-stacked light shield section faces said thin-film transistor disposed on said thin-film transistor substrate and a periphery of said thin-film transistor.

4. A method for manufacturing a color filter substrate for a liquid crystal display, said method comprising in a sequential order:

forming a plurality of first color filter layers with a spacing formed in an extending direction of gate lines between each of the plurality of first color filter layers, the color filter layers including a first stripe portion extending in a direction parallel to signal lines, and a pair of extension portions extending from said first stripe portion in opposite directions parallel to said gate lines;

forming a plurality of second color filter layers including a second stripe portion extending in a direction parallel to said signal lines, and a pair of second extension portions extending from said second stripe portion in opposite directions parallel to said gate lines adjacent to each said first color filter layer so that said second stripe portion is in parallel to said first stripe portion, and said second stripe portion and said first stripe portion are partially stacked on each other; and

forming a plurality of third color filter layers including a third stripe portion extending in a direction parallel to said signal lines, and a pair of third extension portions extending from said stripe portion in opposite directions parallel to said gate lines adjacent said first color filter layer and said second color filter layer so that said third stripe portion is in parallel to said first and second stripe portions, and said third stripe portion is partially stacked on said first and second stripe portions, wherein

said first through third color filter layers have different colors,

a first color-stacked light shield section including color filter layers with two different colors stacked on each other in a portion of an area corresponding to a light shielded area on said color filter substrate is formed due to said first through third stripe portions adjacent to each other that are stacked on each other, and

a second color-stacked light shield section including color filter layers with three different colors stacked on each other in a portion of an area corresponding to said light shielded area on said color filter substrate is formed due to said first through third color filter layers that are formed such that said pair of first through third extension portions are extended on a line parallel to an extending direction of said gate lines.

5. The method according to claim 4 , wherein said first color filter layer is a blue-color filter layer, said second color filter layer is a red-color filter layer, and the third color filter layer is a green-color filter layer, or said first color filter layer is a red-color filter layer, said second color filter layer is a blue-color filter layer, and said third color filter layer is a green-color filter layer.

6. The method according to claim 4 , wherein said second color-stacked light shield section faces a thin-film transistor disposed on a thin-film transistor substrate and a periphery of said thin-film transistor.

Assignments (2)
CHANGE OF NAME Recorded May 22, 2013
From: NEC LCD TECHNOLOGIES, LTD.
To: NLT TECHNOLOGIES, LTD.
Reel/Frame 030486/0309 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 15, 2012
From: TAKAHASHI, SOUNOSUKE; SUZUKI, TERUAKI; NISHIDA, SHINICHI; SAKAGUCHI, YOSHIKAZU; SASAKI, YOICHI
To: NEC LCD TECHNOLOGIES, LTD.
Reel/Frame 028790/0198 →
Priority Claims (2)
JP 2007-334501 · Dec 26, 2007 · national
JP 2008-272401 · Oct 22, 2008 · national
Continuity (2)
Division 12344679 · Dec 29, 2008
Related Publication 20120309120A1 · Dec 6, 2012