Electronic component module
An electronic component module has a circuit board in which metal plates are bonded to both surfaces of a ceramic substrate, and an electronic component that is bonded to at least one surface of the metal plate and is operable at least 125° C. The electronic component is bonded to the metal plate via a brazing material layer having a higher melting point than a operating temperature of the electronic component.
1. An electronic component module, comprising:
a circuit board including a silicon nitride substrate having a first principal surface and a second principal surface opposite to the first principal surface, a first metal plate bonded to the first principal surface of the silicon nitride substrate as a circuit, and a second metal plate bonded to the second principal surface of the silicon nitride substrate as a heatsink; and
an electronic component bonded to the first metal plate via a first brazing material layer, wherein the electronic component is a thermoelectric element of which an operation environmental temperature is 300° C. or more and 500° C. or less,
wherein the first brazing material layer is formed of a brazing material having a melting point in a range of 575° C. to 730° C., and the melting point is higher than the operation environmental temperature of the thermoelectric element, and
wherein a ratio of a thickness of the first metal plate to a thickness of the second metal plate is 50% or more and 200% or less.
2. The electronic component module according to claim 1 ,
wherein the electronic component comprises a plurality of the thermoelectric elements bonded to the first metal plate.
3. The electronic component module according to claim 1 ,
wherein a base plate is bonded to the second metal plate via a second brazing material layer.
4. The electronic component module according to claim 3
wherein the second brazing material layer is formed of the brazing material.
5. The electronic component module according to claim 1 ,
wherein the brazing material is an Ag—Cu based brazing material containing Ag and Cu in a range of 85% or more by mass in total.
6. The electronic component module according to claim 5 ,
wherein the Ag—Cu based brazing material further contains at least one element selected from Ti, Zr and Hf in a range of not less than 1% nor more than 5% by mass and the balance of at least one element selected from Sn and In.
7. The electronic component module according to claim 5 ,
wherein the Ag—Cu based brazing material has a composition of which a rate of Cu is in a range of 10 to 35 parts by mass when a total amount of Ag and Cu is set to be 100 parts by mass.
8. The electronic component module according to claim 1 ,
wherein the brazing material is an Al based brazing material containing Al at 90% or more by mass.
9. The electronic component module according to claim 8 ,
wherein the Al based brazing material further contains at least one element selected from rare-earth elements in a range of not less than 0.1% nor more than 3% by mass and the balance of Si.