Nitride semiconductor light-emitting element, nitride semiconductor light-emitting device, and method of manufacturing nitride semiconductor light-emitting element

1. A nitride semiconductor light-emitting element comprising:

a substrate;

a nitride semiconductor multilayer portion provided on the substrate; and

a current diffusion layer provided on the nitride semiconductor multilayer portion,

wherein the nitride semiconductor multilayer portion includes a light-emitting layer, and

an air gap layer is formed in one of an area between the substrate and the light-emitting layer, an area between the light-emitting layer and the current diffusion layer and an area on an upper surface of the current diffusion layer, and

a thickness of the air gap layer is approximately an odd multiple of one-fourth of a wavelength of light emitted from the light-emitting layer.

2. The nitride semiconductor light-emitting element of claim 1 , further comprising:

a protective layer provided on the current diffusion layer,

wherein the air gap layer is provided between the current diffusion layer and the protective layer.

3. The nitride semiconductor light-emitting element of claim 1 ,

wherein the nitride semiconductor multilayer portion further includes: a first nitride semiconductor layer provided between the substrate and the light-emitting layer; and a second nitride semiconductor layer provided between the light-emitting layer and the current diffusion layer, and

the air gap layer is formed in one of an area within the first nitride semiconductor layer and an area within the second nitride semiconductor layer.

4. The nitride semiconductor light-emitting element of claim 1 , further comprising:

a solid layer that is provided adjacent to the air gap layer in a direction of a normal to a main surface of the light-emitting layer,

wherein the solid layer has a high refractive index contrast for the air gap layer, and pairs with the air gap layer to form a reflective mirror.

5. The nitride semiconductor light-emitting element of claim 1 , further comprising:

a joining electrode provided on an upper portion of the nitride semiconductor multilayer portion; and

a first highly reflective electrode layer provided between the nitride semiconductor multilayer portion and the joining electrode.

6. The nitride semiconductor light-emitting element of claim 1 ,

wherein the nitride semiconductor multilayer portion further includes a first nitride semiconductor layer provided between the substrate and the light-emitting layer, and

the nitride semiconductor light-emitting element further comprises:

a contact electrode provided on an upper portion of the first nitride semiconductor layer; and

a second highly reflective electrode layer provided between the first nitride semiconductor layer and the contact electrode.

7. A nitride semiconductor light-emitting device comprising:

a nitride semiconductor light-emitting element including: a substrate; a nitride semiconductor multilayer portion provided on the substrate and having a light-emitting layer; and a current diffusion layer provided on the nitride semiconductor multilayer portion;

a package substrate on which the nitride semiconductor light-emitting element is mounted; and

an optically transparent resin sealing portion that seals the nitride semiconductor light-emitting element mounted on the package substrate,

wherein an air gap layer is formed in at least one of an area between the substrate and the light-emitting layer in the nitride semiconductor light-emitting element, an area between the light-emitting layer and the current diffusion layer in the nitride semiconductor light-emitting element and an area on an upper surface of the current diffusion layer, and/or formed in an area in the package substrate,

a thickness of the air gap layer is approximately an odd multiple of one-fourth of a wavelength of light emitted from the light-emitting layer.