Fine polycrystalline diamond compact with a grain growth inhibitor layer between diamond and substrate
View Patent ↗Polycrystalline diamond compacts for cutting tools and rock drilling tools, and more particularly to very fine polycrystalline diamond compacts with a grain growth inhibitor layer and reduced abnormal grain growth. A method of fabricating such polycrystalline diamond material includes placing a powder layer of nano-sized grain growth inhibitor particles next to a mixture of diamond particles having an average particle size of about 1 micron or less and sintering at high pressure and high temperature to create a polycrystalline structure of sintered diamond grains. The sintered diamond grains have an average size of about 1 micron or less.
1. A method of fabricating a polycrystalline diamond material, comprising:
placing a powder layer of nano-sized grain growth inhibitor particles next to a mixture of diamond particles, the mixture of diamond particles having an average particle size of about 1 micron or or less, the grain growth inhibitor layer comprising a plurality of titanium-containing particles being less than 800 nanometers in size;
placing a substrate next to the powder layer; and
sintering the mixture of diamond particles and the powder layer of grain growth inhibitor particles at high pressure and high temperature to create a polycrystalline structure of sintered diamond grains,
wherein the sintered diamond grains have an average size of about 1 micron or or less and the grain growth inhibitor is bonded to the substrate and to the polycrystalline diamond at opposite sides and is about 20-100 microns in thickness.
2. The method of claim 1 , wherein the diamond particles have an average particle size of about 0.5 micron or less.
3. The method of claim 1 , wherein the powder layer of nano-sized grain growth inhibitor particles comprises a carbide, nitride, and/or carbon nitride of titanium.
4. The method of claim 1 , wherein the grain growth inhibitor particles have a particle size of less than 200 nanometers.
5. The method of claim 4 , wherein the grain growth inhibitor particles have an average particle size of less than 100 nanometers.
6. The method of claim 1 , wherein the largest sintered diamond grains are no larger than 3 microns in size.
7. The method of claim 1 , wherein the powder layer of grain growth inhibitor particles comprises a homogeneous mixture of grain growth inhibitor particles.
8. The method of claim 1 , further comprising carrying a portion of the grain growth inhibitor particles into the mixture of diamond particles during sintering.
9. The method of claim 1 , further comprising reducing a rate of infiltration of a catalyst from the substrate into the mixture of diamond particles during sintering.
10. The method of claim 1 , further comprising partially compacting the grain growth inhibitor and the diamond particles prior to sintering, wherein the grain growth inhibitor has a density in the range of 30% to 70% of theoretical density.
11. The method of claim 1 , wherein the grain growth inhibitor particles have an average particle size that is smaller than an average size particle size of said diamond particles.
12. The method of claim 1 , wherein the titanium-containing particles comprise only one type of particles selected from the group consisting essentially of TiC, TiC x N y , and TiN.
13. The method of claim 1 , wherein the titanium-containing particles are selected from the group consisting essentially of TiC, TiC x N y , TiN, and combinations thereof.
14. A polycrystalline diamond material manufactured by the process of claim 1 .
15. A polycrystalline diamond compact comprising:
a polycrystalline diamond body comprising a material microstructure comprising a plurality of bonded-together diamond grains and interstitial regions between the diamond grains;
a substrate comprising tungsten and a catalyst metal; and
a grain growth inhibitor layer between the polycrystalline diamond body and the substrate, the grain growth inhibitor layer comprising a plurality of titanium-containing particles interspersed with tungsten and the catalyst metal,
wherein the titanium-containing particles are less than 800 nanometers in size,
wherein the grain growth inhibitor layer is bonded to the substrate and to the polycrystalline diamond body at opposite sides, and is about 20-100 microns in thickness; and
wherein the diamond grains have an average size of about 1 micron or less.
16. The polycrystalline diamond compact of claim 15 , wherein the grain growth inhibitor layer comprises about 1-25 atomic % Tungsten, 20-70 atomic % Titanium, 2-35 atomic % Cobalt, and the balance Carbon and Nitrogen.
17. The polycrystalline diamond compact of claim 16 , wherein the Tungsten, Titanium, and Cobalt are evenly dispersed throughout the grain growth inhibitor layer.
18. The polycrystalline diamond compact of claim 15 , wherein the grain growth inhibitor layer is bonded to the substrate and to the polycrystalline diamond body at opposite sides, and is about 50-70 microns in thickness.
19. The polycrystalline diamond compact of claim 15 , wherein the diamond grains have an average size of 0.5 micron or less.
20. A cutting tool comprising a tool body and at least one polycrystalline diamond compact as claimed in claim 15 , disposed thereon.