Display device and manufacturing process of display device
View Patent ↗Provided a display device including a thin film transistor. The thin film transistor includes a gate electrode, a gate insulating layer which covers the gate electrode, an oxide semiconductor film above the gate insulating layer, a source electrode and a drain electrode which are respectively provided in contact with a first region and a second region, which are provided in the upper surface of the oxide semiconductor film, and a channel protective film which is provided in contact with a third region between the first region and the second region. In plan view, a region of the oxide semiconductor film, which overlaps with the gate electrode, is smaller than the third region, and a portion of the oxide semiconductor film except for a portion which overlaps with the gate electrode has a resistance lower than the portion.
1. A display device, comprising:
an insulating substrate; and
a thin film transistor formed on the insulating substrate,
wherein the thin film transistor comprises:
a conductive layer provided with a gate electrode;
a gate insulating layer which is provided on the conductive layer and contains an insulating material;
an oxide semiconductor film which is provided in contact with an upper surface of the gate insulating layer and is provided above the gate electrode;
a source electrode which is provided in contact with a first region provided in an upper surface of the oxide semiconductor film;
a drain electrode which is provided in contact with a second region spaced apart from the first region, the second region being provided in the upper surface of the oxide semiconductor film; and
a channel protective film which contains the insulating material and is provided in contact with a third region provided between the first region and the second region, the third region being provided in the upper surface of the oxide semiconductor film,
wherein, in plan view, a first portion of the oxide semiconductor film, which overlaps with the gate electrode, is a part of a larger second portion of the oxide semiconductor film, which overlaps with the channel protective film, and
wherein a portion of the oxide semiconductor film, except for at least one part of the first portion of the oxide semiconductor film, has a resistance lower than a resistance of another part of the first portion of the oxide semiconductor film.
2. The display device according to claim 1 , wherein the insulating material is a silicon oxide.
3. The display device according to claim 1 ,
wherein the oxide semiconductor film has, in plan view, a portion which overlaps with the third region between the portion which overlaps with the gate electrode and a portion which overlaps with the first region, and
wherein the oxide semiconductor film has, in plan view, a portion which overlaps with the third region between the portion which overlaps with the gate electrode and a portion which overlaps with the second region.
4. The display device according to claim 1 , wherein the third region is provided in contact with the first region and the second region.
5. The display device according to claim 1 , wherein the portion of the oxide semiconductor film, except for the at least one part of the first portion of the oxide semiconductor film, has an oxygen content lower than an oxygen content of the another part of the first portion of the oxide semiconductor film.
6. The display device according to claim 5 , wherein the at least one part of the first portion of the oxide semiconductor film and the another part of the first portion of the oxide semiconductor film overlap with the gate electrode.
7. The display device according to claim 1 , wherein the at least one part of the first portion of the oxide semiconductor film and the another part of the first portion of the oxide semiconductor film overlap with the gate electrode.
8. The display device according to claim 1 , wherein a portion of the oxide semiconductor film which is in contact with and overlaps with the channel protective film has a dimension greater than a dimension of a portion of the oxide semiconductor film which overlaps with the gate electrode.
9. The display device according to claim 8 , wherein the oxide semiconductor film has a dimension greater than the dimension of the portion of the oxide semiconductor film which is in contact with and overlaps with the channel protective film.