Method of producing a radiation-emitting optoelectronic component

1. A method for producing an optoelectronic component which emits radiation in a main radiation direction, comprising a semiconductor chip having a first main area, a first contact area and a second main area, opposite the first main area, with a second contact area, and a carrier body having first and second connection regions, electrically insulated from one another, wherein the method comprises the steps of:

mounting the semiconductor chip by the first main area onto the carrier body and electrically conductively connecting the first contact area to the first connection region;

applying a transparent electrically insulating glass encapsulation layer to the semiconductor chip and the carrier body, application of the insulating glass encapsulation layer comprising the steps of

applying a precursor layer containing inorganic and organic constituents;

removing the organic constituents from the precursor layer with a first thermal treatment; and

densifying the precursor layer into a glass layer with a second thermal treatment;

producing a first cutout in the glass layer for at least partly uncovering the second contact area of the semiconductor chip, and producing a second cutout in the insulating glass encapsulation layer for at least partly uncovering the second connection region of the carrier body; and

applying an electrically conductive layer, which electrically conductively connects the second contact area of the semiconductor chip and the second connection region of the carrier body.

2. A method for producing an optoelectronic component which emits radiation in a main radiation direction, comprising a semiconductor chip having a first main area, a first contact area and a second main area, opposite the first main area, with a second contact area, and a carrier body having first and second connection regions, electrically insulated from one another, wherein the method comprises the steps of:

mounting the semiconductor chip by the first main area onto the carrier body and electrically conductively connecting the first contact area to the first connection region;

applying a transparent electrically insulating encapsulation layer to the semiconductor chip and the carrier body;

producing a first cutout in the encapsulation layer for at least partly uncovering the second contact area of the semiconductor chip, and producing a second cutout in the encapsulation layer for at least partly uncovering the second connection region of the carrier body;

applying an electrically conductive layer, which electrically conductively connects the second contact area of the semiconductor chip and the second connection region of the carrier body; and

applying an electrically insulating glass layer to the electrically conductive layer, application of the cover layer comprising the steps of:

applying a precursor layer containing inorganic and organic constituents;

removing the organic constituents from the precursor layer with a first thermal treatment; and

densifying the precursor layer into a glass layer with a second thermal treatment.

3. The method as claimed in claim 2 , wherein the encapsulation layer is a plastic layer.

4. The method as claimed in claim 2 , wherein the encapsulation layer is applied by laminating on a film, printing on, spraying on or spin-coating.

5. The method as claimed in claim 2 , wherein the encapsulation layer is a glass layer.

6. The method as claimed in claim 1 , wherein the first cutout and the second cutout are produced in the encapsulation layer via laser machining.

7. The method as claimed in claim 1 , wherein in order to produce the electrically conductive layer, a metal layer is applied by a PVD method and is subsequently reinforced via electrodeposition.

8. The method as claimed in claim 1 , wherein the electrically conductive layer is applied by a printing method.

9. The method as claimed in claim 1 , wherein the electrically conductive layer is applied by spraying on or spin-coating.

10. The method as claimed in claim 2 , wherein the first cutout and the second cutout are produced in the encapsulation layer via laser machining.

11. The method as claimed in claim 2 , wherein in order to produce the electrically conductive layer, a metal layer is applied by a PVD method and is subsequently reinforced by means of electrodeposition.

12. The method as claimed in claim 2 , wherein the electrically conductive layer is applied by a printing method.

13. The method as claimed in claim 2 , wherein the electrically conductive layer is applied by spraying on or spin-coating.