IP Library Granted Patent US 8,551,277
Granted Patent B2
US 8,551,277 · App. 13/597,341 · Granted Oct 8, 2013

Method for producing light emitting diode device

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Quick Facts
Patent No.
US 8,551,277
App. No.
13/597,341
Granted
Oct 8, 2013
Kind
B2
Abstract

A method for producing a light emitting diode device includes the steps of preparing a laminate including, in order, a supporting layer, a constraining layer and an encapsulating resin layer, each formed in a thickness direction; cutting the encapsulating resin layer and the constraining layer in the laminate into a pattern corresponding to the light emitting diode element; removing a portion which does not correspond to the light emitting diode element in the encapsulating resin layer and the constraining layer that are cut into the pattern; allowing the encapsulating resin layer corresponding to the light emitting diode element to be opposed to the light emitting diode element to be pressed in the direction where they come close to each other so as to encapsulate the light emitting diode element by the encapsulating resin layer; and removing the supporting layer and the constraining layer from the laminate.

Claims (15)

1. A method for producing a light emitting diode device,

provided with a light emitting diode element encapsulated by an encapsulating resin layer,

comprising, in order, the steps of:

preparing a laminate including a supporting layer, a constraining layer formed at one side in a thickness direction of the supporting layer, and the encapsulating resin layer formed at one side in the thickness direction of the constraining layer and made of an encapsulating resin;

cutting the encapsulating resin layer and the constraining layer in the laminate into a pattern corresponding to the light emitting diode element;

removing a portion which does not correspond to the light emitting diode element in the encapsulating resin layer and the constraining layer that are cut into the pattern;

allowing the encapsulating resin layer corresponding to the light emitting diode element to be opposed to the light emitting diode element to be pressed in the direction where they come close to each other so as to encapsulate the light emitting diode element by the encapsulating resin layer; and

removing the supporting layer and the constraining layer from the laminate.

2. The method for producing a light emitting diode device according to claim 1 , wherein

the encapsulating resin is a thermosetting resin and

the encapsulating resin layer is formed of a B-stage resin of the thermosetting resin.

3. The method for producing a light emitting diode device according to claim 1 , wherein

in the step of preparing the laminate,

a phosphor layer is interposed between the constraining layer and the encapsulating resin layer, and

the encapsulating resin layer is formed at one side in the thickness direction of the phosphor layer.

Assignments (3)
CHANGE OF NAME Recorded Feb 18, 2026
From: EPISTAR CORPORATION
To: ENNOSTAR CORPORATION
Reel/Frame 075171/0402 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 1, 2017
From: NITTO DENKO CORPORATION
To: EPISTAR CORPORATION
Reel/Frame 044278/0175 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 29, 2012
From: OOYABU, YASUNARI; KATAYAMA, HIROYUKI; TSUKAHARA, DAISUKE; MITANI, MUNEHISA
To: NITTO DENKO CORPORATION
Reel/Frame 028869/0082 →