Method for producing an optoelectronic component and optoelectronic component

1. A method for producing an optoelectronic component, the method comprising:

providing a silicon-based growth substrate having a first coefficient of thermal expansion;

applying a multilayered nitride-containing buffer layer sequence;

epitaxially depositing a layer sequence, the layer sequence having a second coefficient of thermal expansion, that differs from the first coefficient of thermal expansion, and that further comprises an active layer suitable for emitting electromagnetic radiation;

forming contacts in the epitaxially deposited layer sequence;

forming a mirror layer on that side of the layer sequence that is remote from the multilayered nitride-containing buffer layer sequence;

forming an insulating material on the mirror layer, the mirror layer being completely surrounded by said insulating material;

applying a carrier substrate on the epitaxially deposited layer sequence provided with contacts;

removing the growth substrate;

structuring the multilayered buffer layer sequence in order to increase a coupling-out of electromagnetic radiation; and

making contact with the epitaxially deposited layer sequence.

2. The method as claimed in claim 1 , wherein the multilayered buffer layer sequence comprises a first partial buffer layer and at least one second partial buffer layer and is embodied for reducing thermal strains induced by the production process on account of the different first and second coefficients of thermal expansion.

3. The method as claimed in claim 1 , wherein the growth substrate is etched for the purpose of being removed and the multilayered buffer layer sequence serves as an etching stop.

4. The method as claimed in claim 1 , wherein the layer sequence comprises a first doped partial layer and a second, differently doped partial layer deposited thereon, wherein a boundary region of the two partial layers forms the active layer and charge carrier recombination takes place in an operating mode of the component.

5. The method as claimed in claim 1 , wherein the layer sequence comprises at least one current spreading layer.

6. The method as claimed in claim 5 , wherein the current spreading layer is formed between the multilayered nitride-containing buffer layer sequence and further partial layers of the epitaxial layer sequence.

7. The method as claimed in claim 1 , wherein the mirror layer forms a current spreading layer.

8. The method as claimed in claim 1 , wherein a partial buffer layer of the multilayered nitride-containing buffer layer sequence comprises the same material, in particular GaN, as a partial layer of the epitaxially grown layer sequence.

9. The method as claimed in claim 1 , further comprising structuring, in particular by etching a surface of the multilayered buffer layer sequence in order to produce a light coupling-out layer.

10. The method as claimed in claim 1 , wherein making contact comprises:

forming at least one hole with an opening on that side of the layer sequence which is remote from the multilayered buffer layer sequence;

forming an insulation layer on sidewalls of the at least one hole;

filling the at least one hole with a conductive material, such that an electrical contact with the layer sequence is produced in at least in a bottom region of the at least one hole; and

forming a bonding contact electrically connected to the conductive material.

11. The method as claimed in claim 1 , wherein making contact comprises:

forming at least one through-hole in the carrier substrate with an opening wherein sidewalls of the through-hole are provided with an insulating material; and

filling the at least one through-hole with an electrically conductive material for making contact with the layer sequence.

12. The method as claimed in claim 1 , wherein the growth substrate substantially comprises silicon, and wherein the growth substrate has at least one spatial orientation selected from the group consisting of:

a (111) orientation,

a (100) orientation,

a (110) orientation,

a (kk0) orientation and

a (k00) orientation,

where k is an integer greater than 1.

13. The method as claimed in claim 1 , wherein during operation of the optoelectronic component, electromagnetic radiation in the direction of the mirror layer is reflected from the mirror layer and directed in the direction of the buffer layer sequence.

14. The method as claimed in claim 1 , wherein the mirror layer is completely encapsulated by the layer sequence and the insulating material.

15. The method as claimed in claim 14 , wherein the mirror layer directly adjoins to the layer sequence and the insulating material.

16. The method as claimed in claim 1 , wherein the layer sequence includes an n-doped first partial layer and a p-doped second partial layer.

17. The method as claimed in claim 16 , wherein the second partial layer is arranged between the first partial layer and the carrier substrate.