Method of production of SiC semiconductor device
View Patent ↗A method of production of an SiC semiconductor device, which can form an ohmic electrode while preventing electrode metal from diffusing in the SiC single crystal substrate, includes a step of forming an ohmic electrode on an SiC substrate, characterized by forming a gettering layer with a defect density higher than the SiC substrate on that substrate to be parallel with the substrate surface, then forming the ohmic electrode the gettering layer outward from the substrate.
1. A method of production of an SiC semiconductor device, comprising:
forming a gettering layer in an SiC layer by implanting, into a region of the SiC layer, ions having little effect on a conductivity of the region of the SiC layer, the gettering layer having a defect density higher than a defect density of the SiC layer and being parallel to a surface of the SiC layer, wherein the ions are selected from a group consisting of Si, C, H, and a rare gas; and
forming an ohmic electrode on the gettering layer.
2. A method of production of an SiC semiconductor device as set forth in claim 1 , wherein the SiC layer includes an SiC epitaxial layer formed on an SiC substrate.
3. A method of production of an SiC semiconductor device as set forth in claim 1 , wherein forming the ohmic electrode includes forming the ohmic electrode from Ni.