METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
According to one embodiment, a method for fabricating a semiconductor device includes performing a back surface processing to remove at least one of a scratch and a foreign material formed on a back surface of a substrate to be processed, a front surface of the substrate being retained in a non-contact state, contacting the back surface of the substrate to a stage to be retained, and providing a pattern on the front surface of the substrate by using lithography.
1 . A method for fabricating a semiconductor device, comprising:
performing a back surface processing to remove at least one of a scratch and a foreign material formed on a back surface of a substrate to be processed, a front surface of the substrate being retained in a non-contact state;
contacting the back surface of the substrate to a stage to be retained; and
providing a pattern on the front surface of the substrate using lithography.
2 . The method of claim 1 , wherein
removing the back surface of the substrate by a processing member, polishing the back surface of the substrate by a processing member or spraying a fluid onto the back surface of the substrate to be processed is used in the back surface processing.
3 . The method of claim 2 , wherein
a sponge, a non-woven cloth, a foamed polyurethane, a polishing tape or a polishing member is used as a material of the processing member.
4 . The method of claim 1 , wherein
a static pressure bearing providing a fluid on the front surface of the substrate is configured to retain the surface of the substrate in the non-contact state.
5 . The method of claim 4 , wherein
the fluid is selected one of water, organic solvent, liquid with organic material and high pressure gas, each of the fluid not having a contamination factor.
6 . The method of claim 2 , wherein
the back surface processing is sliding the processing member while contacting the processing member to the back surface of the substrate.
7 . The method of claim 6 , wherein
the substrate is pressed with a pressure of 100 hPa or more by the processing member in the back surface processing.
8 . The method of claim 6 , wherein
the processing member having a diameter smaller than a diameter of the substrate is moved on the back surface of the substrate in the back surface processing.
9 . The method of claim 1 , further comprising:
cleaning the back surface of the substrate and successively drying the back surface of the substrate, after the performing the back surface processing and before the providing the pattern on the front surface of the substrate.
10 . The method of claim 9 , wherein
the static pressure bearing providing the fluid on the front surface of the substrate is configured to retain the substrate when the performing the back surface processing and the cleaning the back surface of the substrate, and a retainer contacting to a side surface of the substrate is configured to be used to retain the substrate when the drying the back surface of the substrate.
11 . A method for fabricating a semiconductor device, comprising:
performing a front surface processing to remove at least one of a scratch and a foreign material formed on a front surface of a substrate to be processed where a back surface of the substrate is retained in a non-contact state;
contacting the back surface of the substrate to a stage to be retained; and
providing a pattern on the front surface of the substrate by using imprint lithography.
12 . The method of claim 11 , wherein
removing the front surface of the substrate by a processing member, polishing the front surface of the substrate by a processing member or spraying a fluid onto the front surface of the substrate is used in the front surface processing.
13 . The method of claim 12 , wherein
a sponge, a non-woven cloth, a foamed polyurethane, a polishing tape or a polishing member is used as a material of the processing member.
14 . The method of claim 11 , wherein
a static pressure bearing providing a fluid on the front surface of the substrate is configured to retain the front surface of the substrate as the non-contact state.
15 . The method of claim 14 , wherein
the fluid is selected from water, organic solvent, liquid with organic material or high pressure gas, each of the fluid not having a contamination factor.
16 . The method of claim 12 , wherein
the front surface processing is sliding the processing member while contacting the processing member to the front surface of the substrate.
17 . The method of claim 16 , wherein
the substrate is pressed by a pressure of 100 hPa or more as the front surface processing.
18 . The method of claim 16 , wherein
the processing member having a diameter smaller than a diameter of the substrate is moved on the front surface of the substrate in the front surface processing.
19 . The method of claim 11 , further comprising:
cleaning the front surface of the substrate and successively drying the front surface of the substrate, after the performing the front surface processing and before the providing the pattern on the front surface of the substrate.
20 . The method of claim 19 , wherein
the static pressure bearing providing the fluid on the front surface of the substrate is configured to retain the substrate when the performing the front surface processing and the cleaning the front surface of the substrate, and a retainer contacting to a side surface of the substrate is configured to be used to retain the substrate when the drying the front surface of the substrate.