Programmable substrate and applications thereof
View Patent ↗An integrated circuit die includes a semiconductor substrate and a plurality of electronic circuits on the semiconductor substrate. The semiconductor substrate is divided into a plurality of regions. A first region of the substrate supports a first type of electronic circuit and has first permittivity, permeability, and conductivity characteristics. A second region of the substrate supports a second type of electronic circuit and has second permittivity, permeability, and conductivity characteristics.
1. An integrated circuit die comprises:
a semiconductor substrate; and
a plurality of electronic circuits on the semiconductor substrate, wherein the semiconductor substrate is divided into a plurality of regions, wherein a first region of the plurality of regions supports a first type of electronic circuit and the semiconductor substrate has first permittivity, permeability, and conductivity characteristics within the first region and wherein a second region of the plurality of regions supports a second type of electronic circuit and the semiconductor substrate has second permittivity, permeability, and conductivity characteristics within the second region, wherein the semiconductor substrate in the first region includes a substrate material that has a perforated silicon pattern such that first region has a high effective permittivity.
2. The integrated circuit die of claim 1 , wherein the semiconductor substrate comprises at least one of:
silicon germanium;
porous alumina;
silicon monocrystals; and
gallium arsenide.
3. The integrated circuit die of claim 1 further comprises:
the semiconductor substrate in the first region including a substrate material that has embedded therein a first embedding pattern of at least one of metallic inclusions and dielectric elements to produce the first permittivity, permeability, and conductivity characteristics; and
the semiconductor substrate in the second region including the substrate material that has embedded therein a second embedding pattern of the at least one of metallic inclusions and dielectric elements to produce the second permittivity, permeability, and conductivity characteristics.
4. The integrated circuit die of claim 3 further comprises:
the first embedding pattern indicating a first quantity of the at least one of metallic inclusions and dielectric elements, a first spacing for the at least one of metallic inclusions and dielectric elements, and a first variety of sizes for the at least one of metallic inclusions and dielectric elements; and
the second embedding pattern indicating a second quantity of the at least one of metallic inclusions and dielectric elements, a second spacing for the at least one of metallic inclusions and dielectric elements, and a second variety of sizes for the at least one of metallic inclusions and dielectric elements.
5. The integrated circuit die of claim 1 further comprises:
the semiconductor substrate in the first region including a substrate material that has embedded therein metallodielectric structures such that the first region has a high effective permeability.
6. The integrated circuit die of claim 1 , wherein an electronic circuit of the plurality of electronic components comprises at least one of:
a capacitor;
a resistor;
an inductor;
a transistor;
a diode; and
an antenna.
7. A semiconductor substrate comprises:
a plurality of regions, wherein a first region of the plurality of regions has first permittivity, permeability, and conductivity characteristics and wherein a second region of the plurality of regions has second permittivity, permeability, and conductivity characteristics, wherein in the first region, a substrate material that has a perforated silicon pattern such that first region has a high effective permittivity.
8. The semiconductor substrate of claim 7 comprises a material of at least one of:
silicon germanium;
porous alumina;
silicon monocrystals; and
gallium arsenide.
9. The semiconductor substrate of claim 7 further comprises:
in the first region, a substrate material that has embedded therein a first embedding pattern of at least one of metallic inclusions and dielectric elements to produce the first permittivity, permeability, and conductivity characteristics; and
in the second region, the substrate material that has embedded therein a second embedding pattern of the at least one of metallic inclusions and dielectric elements to produce the second permittivity, permeability, and conductivity characteristics.
10. The semiconductor substrate of claim 9 further comprises:
the first embedding pattern indicating a first quantity of the at least one of metallic inclusions and dielectric elements, a first spacing for the at least one of metallic inclusions and dielectric elements, and a first variety of sizes for the at least one of metallic inclusions and dielectric elements; and
the second embedding pattern indicating a second quantity of the at least one of metallic inclusions and dielectric elements, a second spacing for the at least one of metallic inclusions and dielectric elements, and a second variety of sizes for the at least one of metallic inclusions and dielectric elements.
11. The semiconductor substrate of claim 7 further comprises:
in the first region, a substrate material that has embedded therein metallodielectric structures such that the first region has a high effective permeability.
12. The semiconductor substrate of claim 7 further comprises:
a third region of the plurality of regions having third permittivity, permeability, and conductivity characteristics.
13. The semiconductor substrate of claim 7 further comprising a plurality of electronic components including at least one of:
a capacitor;
a resistor;
an inductor;
a transistor;
a diode; and
an antenna.
14. A semiconductor substrate comprises:
a plurality of regions, wherein:
a first region of the plurality of regions has first permittivity, permeability, and conductivity characteristics, formed of a substrate material that has embedded therein a first embedding pattern of at least one of metallic inclusions and dielectric elements to produce the first permittivity, permeability, and conductivity characteristics, the first embedding pattern indicating a first quantity of the at least one of metallic inclusions and dielectric elements, a first spacing for the at least one of metallic inclusions and dielectric elements, and a first variety of sizes for the at least one of metallic inclusions and dielectric elements; and
a second region of the plurality of regions has second permittivity, permeability, and conductivity characteristics, formed of a substrate material that has embedded therein a second embedding pattern of the at least one of metallic inclusions and dielectric elements to produce the second permittivity, permeability, and conductivity characteristics, the second embedding pattern indicating a second quantity of the at least one of metallic inclusions and dielectric elements, a second spacing for the at least one of metallic inclusions and dielectric elements, and a second variety of sizes for the at least one of metallic inclusions and dielectric elements.
15. The semiconductor substrate of claim 14 comprises a material of at least one of:
silicon germanium;
porous alumina;
silicon monocrystals; and
gallium arsenide.
16. The semiconductor substrate of claim 14 further comprises:
in the first region, a substrate material that has embedded therein metallodielectric structures such that the first region has a high effective permeability.
17. The semiconductor substrate of claim 14 further comprises:
in the first region, a substrate material that has a perforated silicon pattern such that first region has a high effective permittivity.
18. The semiconductor substrate of claim 14 further comprises:
a third region of the plurality of regions having third permittivity, permeability, and conductivity characteristics.
19. The semiconductor substrate of claim 14 further comprising a plurality of electronic components formed in the first region and the second region.
20. The semiconductor substrate of claim 19 , wherein the plurality of electronic components comprises at least one of:
a capacitor;
a resistor;
an inductor;
a transistor;
a diode; and
an antenna.