Substrate for an electrowetting display device and method of manufacturing the substrate
A substrate for an electrowetting display device including a pixel electrode, a partition wall pattern and a water-repellent pattern. The pixel electrode is formed on a base substrate. The partition wall pattern is disposed along an edge of the pixel electrode to expose the pixel electrode. The water-repellent pattern is disposed at a space formed by the pixel electrode and the partition wall pattern to be extended along a lower portion of side surfaces of the partition wall pattern from an area on which the pixel electrode is formed. The water-repellent pattern exposes an upper portion of the side surfaces and an upper surface of the partition wall pattern. Thus, a manufacturing reliability of a substrate for an electrowetting display device is improved to prevent a display quality from being reduced.
1. A method of manufacturing a substrate for an electrowetting display device, the method comprising:
forming a preliminary partition wall pattern on a base substrate on which a pixel electrode is formed;
forming a water-repellent layer on the base substrate having the preliminary partition wall pattern, wherein the water-repellent layer covers the preliminary partition wall pattern;
forming a mask pattern on the base substrate, the mask pattern exposing an upper surface of the preliminary partition wall pattern and an upper portion of side surfaces of the preliminary partition wall pattern connected to the upper surface;
forming a water-repellent pattern by removing the water-repellent layer covering an upper portion of the preliminary partition wall pattern;
forming a partition wall pattern, which is lower than a height of the preliminary partition wall pattern, by removing the upper portion of the preliminary partition wall exposed by the mask pattern and the water-repellent pattern; and
removing the mask pattern from the base substrate on which the water-repellent pattern and the partition wall pattern are formed.
2. The method of claim 1 , wherein forming the mask pattern comprises:
forming a planarization layer having a height greater than a height of the preliminary partition wall pattern to thereby cover the preliminary partition wall pattern on the base substrate on which the water-repellent layer is formed; and
partially removing the planarization layer.
3. The method of claim 2 , wherein the mask pattern is formed by dry etching a portion of the planarization layer.
4. The method of claim 2 , wherein the planarization layer comprises a photoresist layer,
wherein forming the mask pattern further comprises partially exposing the planarization layer, and
wherein the mask pattern is formed by partially removing the partially exposed planarization layer using a developing solution.
5. The method of claim 1 , wherein the water-repellent pattern is formed by dry etching the water-repellent layer, and
wherein the partition wall pattern is formed by dry etching the preliminary partition wall pattern.
6. The method of claim 1 , wherein the mask pattern is removed by using a strip solution.
7. The method of claim 1 , wherein the mask pattern is removed through an ashing process.
8. The method of claim 1 , wherein removing the mask pattern comprises:
exposing the mask pattern; and
removing the exposed mask pattern by using a developing solution.
9. The method of claim 1 , wherein a height of the mask pattern is less than a height of the preliminary partition wall pattern.
10. The method of claim 1 , wherein a lower portion of the side surfaces connected to the upper surface of the preliminary partition wall pattern is from a lower boundary part of the preliminary partition wall pattern to a middle portion of the preliminary partition wall pattern, and
the upper portion extends from the middle portion to an upper surface of the preliminary partition wall pattern.
11. A method of manufacturing a substrate for an electrowetting display device, the method comprising:
forming a partition wall pattern on a base substrate on which a pixel electrode is formed;
forming a water-repellent layer on the base substrate having the partition wall pattern, wherein the water repellent layer covers the partition wall pattern; and
forming a hydrophilic pattern on the water-repellent layer by hydrophilic treating a portion of the water-repellent layer covering an upper surface of the partition wall pattern.
12. The method of claim 11 , wherein forming the hydrophilic pattern comprises:
forming a mask pattern exposing an upper surface of the partition wall pattern and an upper portion of side surfaces connected to the upper surface on a base substrate on which the water-repellent layer is formed; and
removing the mask pattern from the base substrate on which the hydrophilic pattern is formed,
wherein the hydrophilic pattern is formed by hydrophilic treating the water-repellent layer by using the mask pattern as an etch stop layer.
13. The method of claim 12 , wherein forming the mask pattern comprises:
forming a planarization layer having a height greater than that of the partition wall pattern on the base substrate on which the partition wall pattern is formed; and
partially removing the planarization layer.
14. The method of claim 12 , wherein a height of the mask pattern is less than that of the partition wall pattern.
15. The method of claim 11 , wherein the hydrophilic treating comprises one of injection of ions into the substrate and providing a reaction gas to the base substrate.
16. The method of claim 12 , wherein removing the mask pattern comprises:
exposing the mask pattern; and
removing the exposed mask pattern by using a developing solution.
17. The method of claim 12 , wherein the mask pattern is removed by using a strip solution.
18. The method of claim 12 , wherein the mask pattern is removed by an ashing process.
19. The method of claim 13 , wherein the planarization layer comprises a photoresist layer,
wherein forming the mask pattern further comprises partially exposing the planarization layer, and
wherein the mask pattern is formed by partially removing the partially exposed planarization layer using a developing solution.
20. The method of claim 13 , wherein the mask pattern is formed by dry etching a portion of the planarization layer.